Dielectric Properties of Ba(Ti0.85Zr0.15)O 3 Film Prepared by Metalorganic Chemical Vapor Deposition

Tetsuro Tohma; Hiroshi Masumoto; Takashi Goto

doi:10.1143/jjap.42.6969

Dielectric Properties of Ba(Ti_0.85Zr_0.15)O ₃ Film Prepared by Metalorganic Chemical Vapor Deposition

Tetsuro Tohma, Hiroshi Masumoto, Takashi Goto

FRIS - Advanced Interdisciplinary Research Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ba(Ti_0.85Zr_0.15)O₃ films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant (ε′) of the film changed depending on the ac electric field (E_ac) and frequency at temperatures below 400 K. The ε′ showed a broad maximum at a specific temperature (TM) that decreased from 370 to 330K with increasing E_ac from 0.15 × 10⁵ to 15 × 10⁵ V·m^-1. The film exhibited ferroelectric characteristics with remanent polarization (2P_r) of 3 × 10^-2 C·m^-2 and coercive field (2E _C) of 14 × 10⁵V·m^-1.

Original language	English
Pages (from-to)	6969-6972
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	11
DOIs	https://doi.org/10.1143/jjap.42.6969
Publication status	Published - 2003 Nov

Keywords

Ba(TiZr )O
Barium titanate
Barium zirconate
Dielectric properties
Domain
Ferroelectric
Film
MOCVD
Relaxor
Scanning nonlinear dielectric microscopy

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title = "Dielectric Properties of Ba(Ti0.85Zr0.15)O 3 Film Prepared by Metalorganic Chemical Vapor Deposition",

abstract = "Ba(Ti0.85Zr0.15)O3 films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant (ε′) of the film changed depending on the ac electric field (Eac) and frequency at temperatures below 400 K. The ε′ showed a broad maximum at a specific temperature (TM) that decreased from 370 to 330K with increasing Eac from 0.15 × 105 to 15 × 105 V·m-1. The film exhibited ferroelectric characteristics with remanent polarization (2Pr) of 3 × 10-2 C·m-2 and coercive field (2E C) of 14 × 105V·m-1.",

keywords = "Ba(TiZr )O, Barium titanate, Barium zirconate, Dielectric properties, Domain, Ferroelectric, Film, MOCVD, Relaxor, Scanning nonlinear dielectric microscopy",

author = "Tetsuro Tohma and Hiroshi Masumoto and Takashi Goto",

year = "2003",

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doi = "10.1143/jjap.42.6969",

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publisher = "Japan Society of Applied Physics",

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T1 - Dielectric Properties of Ba(Ti0.85Zr0.15)O 3 Film Prepared by Metalorganic Chemical Vapor Deposition

AU - Tohma, Tetsuro

AU - Masumoto, Hiroshi

AU - Goto, Takashi

PY - 2003/11

Y1 - 2003/11

N2 - Ba(Ti0.85Zr0.15)O3 films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant (ε′) of the film changed depending on the ac electric field (Eac) and frequency at temperatures below 400 K. The ε′ showed a broad maximum at a specific temperature (TM) that decreased from 370 to 330K with increasing Eac from 0.15 × 105 to 15 × 105 V·m-1. The film exhibited ferroelectric characteristics with remanent polarization (2Pr) of 3 × 10-2 C·m-2 and coercive field (2E C) of 14 × 105V·m-1.

AB - Ba(Ti0.85Zr0.15)O3 films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant (ε′) of the film changed depending on the ac electric field (Eac) and frequency at temperatures below 400 K. The ε′ showed a broad maximum at a specific temperature (TM) that decreased from 370 to 330K with increasing Eac from 0.15 × 105 to 15 × 105 V·m-1. The film exhibited ferroelectric characteristics with remanent polarization (2Pr) of 3 × 10-2 C·m-2 and coercive field (2E C) of 14 × 105V·m-1.

KW - Ba(TiZr )O

KW - Barium titanate

KW - Barium zirconate

KW - Dielectric properties

KW - Domain

KW - Ferroelectric

KW - Film

KW - MOCVD

KW - Relaxor

KW - Scanning nonlinear dielectric microscopy

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DO - 10.1143/jjap.42.6969

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SN - 0021-4922

VL - 42

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

ER -

Dielectric Properties of Ba(Ti_0.85Zr_0.15)O ₃ Film Prepared by Metalorganic Chemical Vapor Deposition

Abstract

Keywords

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