Dielectric properties of Nb-doped PbZrO3 thin films prepared by pulsed laser deposition

Naoki Ikeda, Atsunori Kamegawa, Hitoshi Takamura, Masuo Okada

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5 Citations (Scopus)


The preparation of Nb-doped PbZrO3 thin films by pulsed laser deposition and the effects of the Nb-doping on the dielectric properties of PbZrO3 thin films have been investigated. By optimizing film deposition conditions and annealing temperatures, the 3 mol% Nb-doped PbZrO3 thin films was successfully prepared under the partial oxygen pressure of 2 or 5 Pa followed by the rapid thermal annealing at 873 K for 1 min. From X-ray diffractometry, the PbZrO3 phase was found to be crystallized without any preferred orientation. The 3 mol% Nb-doped PbZrO3 film exhibited a double hysteresis loop with a transition field (antiferroelecric to ferrcelectric phase) of 208×105 V/m and saturation polarization of 20×10-2 C/m2. It was found that the Nb-doping might contribute to reduce the transition field and polarization of PbZrO3 thin films. In addition, the Nb-doped PbZrO3 film with a thickness of 185 nm showed a ferroelectric hysteresis loop with the parameters of Ps = 22×10-2 C/m2, Pr = 17×10-2 C/m2 and Ec = 320×105 V/m.

Original languageEnglish
Pages (from-to)589-592
Number of pages4
JournalMaterials Transactions, JIM
Issue number5
Publication statusPublished - 2000 May

ASJC Scopus subject areas

  • Engineering(all)


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