Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells

T. Suski; H. Teisseyre; S. P. Łepkowski; P. Perlin; T. Kitamura; Y. Ishida; H. Okumura; S. F. Chichibu

doi:10.1063/1.1490400

Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells

T. Suski, H. Teisseyre, S. P. Łepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, S. F. Chichibu

IMRAM - Division of Measurements

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Abstract

We have studied the influence of hydrostatic pressure on the light emission from cubic In_0.1Ga_0.9N. A qualitative difference between pressure dependence of photoluminescence peak energies for cubic and wurtzite symmetry InGaN/GaN quantum wells (QWs) was found. Cubic samples revealed magnitude of dE_E/dP of 26-30 meV/GPa, practically independent of the QW width. Previous studies of the hexagonal InGaN/GaN structures showed that with increasing QW width dE_E/dP changed between about 30 meV/GPa and 0 meV/GPa. This different behavior of two types of QWs can be explained by the lack of built-in electric field (along growth direction) in case of cubic structures. To describe pressure evolution of the optical transitions in cubic InGaN/GaN QWs and thick epitaxial layer, we use a simple k×p model based on the linear theory of elasticity. To reproduce the experimental data, it is necessary to invoke presence of In-rich fluctuations in the cubic In _0.1Ga_0.9N samples.

Original language	English
Pages (from-to)	232-234
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	2
DOIs	https://doi.org/10.1063/1.1490400
Publication status	Published - 2002 Jul 8

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title = "Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells",

abstract = "We have studied the influence of hydrostatic pressure on the light emission from cubic In0.1Ga0.9N. A qualitative difference between pressure dependence of photoluminescence peak energies for cubic and wurtzite symmetry InGaN/GaN quantum wells (QWs) was found. Cubic samples revealed magnitude of dEE/dP of 26-30 meV/GPa, practically independent of the QW width. Previous studies of the hexagonal InGaN/GaN structures showed that with increasing QW width dEE/dP changed between about 30 meV/GPa and 0 meV/GPa. This different behavior of two types of QWs can be explained by the lack of built-in electric field (along growth direction) in case of cubic structures. To describe pressure evolution of the optical transitions in cubic InGaN/GaN QWs and thick epitaxial layer, we use a simple k×p model based on the linear theory of elasticity. To reproduce the experimental data, it is necessary to invoke presence of In-rich fluctuations in the cubic In 0.1Ga0.9N samples.",

author = "T. Suski and H. Teisseyre and {\L}epkowski, {S. P.} and P. Perlin and T. Kitamura and Y. Ishida and H. Okumura and Chichibu, {S. F.}",

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doi = "10.1063/1.1490400",

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T1 - Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells

AU - Suski, T.

AU - Teisseyre, H.

AU - Łepkowski, S. P.

AU - Perlin, P.

AU - Kitamura, T.

AU - Ishida, Y.

AU - Okumura, H.

AU - Chichibu, S. F.

PY - 2002/7/8

Y1 - 2002/7/8

N2 - We have studied the influence of hydrostatic pressure on the light emission from cubic In0.1Ga0.9N. A qualitative difference between pressure dependence of photoluminescence peak energies for cubic and wurtzite symmetry InGaN/GaN quantum wells (QWs) was found. Cubic samples revealed magnitude of dEE/dP of 26-30 meV/GPa, practically independent of the QW width. Previous studies of the hexagonal InGaN/GaN structures showed that with increasing QW width dEE/dP changed between about 30 meV/GPa and 0 meV/GPa. This different behavior of two types of QWs can be explained by the lack of built-in electric field (along growth direction) in case of cubic structures. To describe pressure evolution of the optical transitions in cubic InGaN/GaN QWs and thick epitaxial layer, we use a simple k×p model based on the linear theory of elasticity. To reproduce the experimental data, it is necessary to invoke presence of In-rich fluctuations in the cubic In 0.1Ga0.9N samples.

AB - We have studied the influence of hydrostatic pressure on the light emission from cubic In0.1Ga0.9N. A qualitative difference between pressure dependence of photoluminescence peak energies for cubic and wurtzite symmetry InGaN/GaN quantum wells (QWs) was found. Cubic samples revealed magnitude of dEE/dP of 26-30 meV/GPa, practically independent of the QW width. Previous studies of the hexagonal InGaN/GaN structures showed that with increasing QW width dEE/dP changed between about 30 meV/GPa and 0 meV/GPa. This different behavior of two types of QWs can be explained by the lack of built-in electric field (along growth direction) in case of cubic structures. To describe pressure evolution of the optical transitions in cubic InGaN/GaN QWs and thick epitaxial layer, we use a simple k×p model based on the linear theory of elasticity. To reproduce the experimental data, it is necessary to invoke presence of In-rich fluctuations in the cubic In 0.1Ga0.9N samples.

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Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells

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