Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect

Tsubasa Nakagawa; Isao Sakaguchi; Masashi Uematsu; Yoshiyuki Sato; Naoki Ohashi; Hajime Haneda; Yuichi Ikuhara

doi:10.1143/JJAP.46.4099

Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect

Tsubasa Nakagawa, Isao Sakaguchi, Masashi Uematsu, Yoshiyuki Sato, Naoki Ohashi, Hajime Haneda, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Diffusion of gallium in single-crystal ZnO (implanted at 150keV at a dose of 2 × 10¹⁶ cm^-2) in the temperature range between 800 and 900°C was investigated on the basis of experimentally measured and simulated profiles. The gallium concentration profiles have a characteristic tail with a constant-concentration region owing to the Fermi-level effect on the diffusion. The gallium concentration profiles were compared with the simulated profiles: both profiles are in good agreement. The simulation provides possible models for gallium diffusion based on the interstitialcy or vacancy mechanism.

Original language	English
Pages (from-to)	4099-4101
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	7 A
DOIs	https://doi.org/10.1143/JJAP.46.4099
Publication status	Published - 2007 Jul 4
Externally published	Yes

Keywords

Diffusion
Fermi-level effect
Gallium
Ion implantation
SIMS
ZnO

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.4099

Cite this

Nakagawa, T., Sakaguchi, I., Uematsu, M., Sato, Y., Ohashi, N., Haneda, H., & Ikuhara, Y. (2007). Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(7 A), 4099-4101. https://doi.org/10.1143/JJAP.46.4099

Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect. / Nakagawa, Tsubasa; Sakaguchi, Isao; Uematsu, Masashi et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 7 A, 04.07.2007, p. 4099-4101.

Research output: Contribution to journal › Article › peer-review

Nakagawa, T, Sakaguchi, I, Uematsu, M, Sato, Y, Ohashi, N, Haneda, H & Ikuhara, Y 2007, 'Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 46, no. 7 A, pp. 4099-4101. https://doi.org/10.1143/JJAP.46.4099

@article{1648babb83934b70963648f904dca09e,

title = "Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect",

abstract = "Diffusion of gallium in single-crystal ZnO (implanted at 150keV at a dose of 2 × 1016 cm-2) in the temperature range between 800 and 900°C was investigated on the basis of experimentally measured and simulated profiles. The gallium concentration profiles have a characteristic tail with a constant-concentration region owing to the Fermi-level effect on the diffusion. The gallium concentration profiles were compared with the simulated profiles: both profiles are in good agreement. The simulation provides possible models for gallium diffusion based on the interstitialcy or vacancy mechanism.",

keywords = "Diffusion, Fermi-level effect, Gallium, Ion implantation, SIMS, ZnO",

author = "Tsubasa Nakagawa and Isao Sakaguchi and Masashi Uematsu and Yoshiyuki Sato and Naoki Ohashi and Hajime Haneda and Yuichi Ikuhara",

year = "2007",

month = jul,

day = "4",

doi = "10.1143/JJAP.46.4099",

language = "English",

volume = "46",

pages = "4099--4101",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 A",

}

TY - JOUR

T1 - Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect

AU - Nakagawa, Tsubasa

AU - Sakaguchi, Isao

AU - Uematsu, Masashi

AU - Sato, Yoshiyuki

AU - Ohashi, Naoki

AU - Haneda, Hajime

AU - Ikuhara, Yuichi

PY - 2007/7/4

Y1 - 2007/7/4

N2 - Diffusion of gallium in single-crystal ZnO (implanted at 150keV at a dose of 2 × 1016 cm-2) in the temperature range between 800 and 900°C was investigated on the basis of experimentally measured and simulated profiles. The gallium concentration profiles have a characteristic tail with a constant-concentration region owing to the Fermi-level effect on the diffusion. The gallium concentration profiles were compared with the simulated profiles: both profiles are in good agreement. The simulation provides possible models for gallium diffusion based on the interstitialcy or vacancy mechanism.

AB - Diffusion of gallium in single-crystal ZnO (implanted at 150keV at a dose of 2 × 1016 cm-2) in the temperature range between 800 and 900°C was investigated on the basis of experimentally measured and simulated profiles. The gallium concentration profiles have a characteristic tail with a constant-concentration region owing to the Fermi-level effect on the diffusion. The gallium concentration profiles were compared with the simulated profiles: both profiles are in good agreement. The simulation provides possible models for gallium diffusion based on the interstitialcy or vacancy mechanism.

KW - Diffusion

KW - Fermi-level effect

KW - Gallium

KW - Ion implantation

KW - SIMS

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=34547850352&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547850352&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.4099

DO - 10.1143/JJAP.46.4099

M3 - Article

AN - SCOPUS:34547850352

SN - 0021-4922

VL - 46

SP - 4099

EP - 4101

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7 A

ER -

Diffusion model of gallium in single-crystal zno proposed from analysis of concentration-dependent profiles based on the fermi-level effect

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this