TY - JOUR
T1 - Diluted magnetic III-V semiconductors
AU - Munekata, H.
AU - Ohno, H.
AU - Von Molnar, S.
AU - Segm̈ller, Armin
AU - Chang, L. L.
AU - Esaki, L.
PY - 1989/1/1
Y1 - 1989/1/1
N2 - A new diluted magnetic III-V semiconductor of In1-xMnxAs (x0.18) has been produced by molecular-beam epitaxy. Films grown at 300°C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200°C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.
AB - A new diluted magnetic III-V semiconductor of In1-xMnxAs (x0.18) has been produced by molecular-beam epitaxy. Films grown at 300°C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200°C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.
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U2 - 10.1103/PhysRevLett.63.1849
DO - 10.1103/PhysRevLett.63.1849
M3 - Article
AN - SCOPUS:4243101311
SN - 0031-9007
VL - 63
SP - 1849
EP - 1852
JO - Physical Review Letters
JF - Physical Review Letters
IS - 17
ER -