Diluted magnetic iii-v semiconductors and its transport properties

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A new class of diluted magnetic semiconductor (DMS) based on III-V compounds and its transport properties are presented. While the new DMS, (In, Mn)As, films exhibiting n-type conduction were all paramagnetic with the Mn-Mninteraction being antiferromagnetic, ferromagnetic interaction between the Mn ions in p-type films manifested itself inthe hysteresis in the magnetic field dependence of the Hall resistivity at low temperatures, indicating the presence of ferromagnetic order. This ferromagnetic order was accompanied by paramagnetic response extending to high magneticfields. The coexistence of remanent magnetization and unsaturated spins (partial ferromagnetic order; asperomagnet-ism) can be explained by the formation of bound magnetic polarons with partially aligned spins. The ferromagneticorder observed in the (In, Mn)As based heterojunctions is also discussed.

Original languageEnglish
Pages (from-to)459-461
Number of pages3
JournalJapanese Journal of Applied Physics
Issue numberS3
Publication statusPublished - 1993 Jan


  • (In
  • Anomalous Hall effect
  • Diluted magnetic semiconductor
  • Ferromagnetic order
  • Hall effect
  • Lll-V compounds
  • Mn)As
  • Molecular beam epitaxy


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