Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

Ute Zschieschang; Frederik Ante; Daniel Kälblein; Tatsuya Yamamoto; Kazuo Takimiya; Hirokazu Kuwabara; Masaaki Ikeda; Tsuyoshi Sekitani; Takao Someya; Jan Blochwitz Nimoth; Hagen Klauk

doi:10.1016/j.orgel.2011.04.018

Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

Ute Zschieschang, Frederik Ante, Daniel Kälblein, Tatsuya Yamamoto, Kazuo Takimiya, Hirokazu Kuwabara, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Jan Blochwitz Nimoth, Hagen Klauk

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

148 Citations (Scopus)

Abstract

Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (DNTT) have been fabricated and characterized. The transistors have field-effect mobilities as large as 2 cm²/V s and an on/off ratio of 10⁸. Owing to the large ionization potential of DNTT, the TFTs show excellent stability for periods of several months of storage in ambient air. Unipolar ring oscillators based on DNTT TFTs with a channel length of 10 μm oscillate with a signal propagation delay as short as 7 μsec per stage at a supply voltage of 5 V. We also show that DNTT TFTs with usefully small channel width/length ratio are able to drive blue organic LEDs to a brightness well above that required for active-matrix displays.

Original language	English
Pages (from-to)	1370-1375
Number of pages	6
Journal	Organic Electronics
Volume	12
Issue number	8
DOIs	https://doi.org/10.1016/j.orgel.2011.04.018
Publication status	Published - 2011 Aug

Keywords

Air stability
Bias-stress stability
Organic thin-film transistors

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10.1016/j.orgel.2011.04.018

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@article{8ed6cff9dc024157a57e45abd82e4d0a,

title = "Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability",

abstract = "Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (DNTT) have been fabricated and characterized. The transistors have field-effect mobilities as large as 2 cm2/V s and an on/off ratio of 108. Owing to the large ionization potential of DNTT, the TFTs show excellent stability for periods of several months of storage in ambient air. Unipolar ring oscillators based on DNTT TFTs with a channel length of 10 μm oscillate with a signal propagation delay as short as 7 μsec per stage at a supply voltage of 5 V. We also show that DNTT TFTs with usefully small channel width/length ratio are able to drive blue organic LEDs to a brightness well above that required for active-matrix displays.",

keywords = "Air stability, Bias-stress stability, Organic thin-film transistors",

author = "Ute Zschieschang and Frederik Ante and Daniel K{\"a}lblein and Tatsuya Yamamoto and Kazuo Takimiya and Hirokazu Kuwabara and Masaaki Ikeda and Tsuyoshi Sekitani and Takao Someya and Nimoth, {Jan Blochwitz} and Hagen Klauk",

note = "Funding Information: The authors thank Richard Rook at CADiLAC Laser for providing high-quality shadow masks and Carmen M{\"u}ller at the Max Planck Institute for Solid State Research for professional photography. We gratefully acknowledge financial support provided by the New Energy and Industrial Technology Development Organization (NEDO) of Japan.",

year = "2011",

month = aug,

doi = "10.1016/j.orgel.2011.04.018",

language = "English",

volume = "12",

pages = "1370--1375",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier BV",

number = "8",

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T1 - Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

AU - Zschieschang, Ute

AU - Ante, Frederik

AU - Kälblein, Daniel

AU - Yamamoto, Tatsuya

AU - Takimiya, Kazuo

AU - Kuwabara, Hirokazu

AU - Ikeda, Masaaki

AU - Sekitani, Tsuyoshi

AU - Someya, Takao

AU - Nimoth, Jan Blochwitz

AU - Klauk, Hagen

N1 - Funding Information: The authors thank Richard Rook at CADiLAC Laser for providing high-quality shadow masks and Carmen Müller at the Max Planck Institute for Solid State Research for professional photography. We gratefully acknowledge financial support provided by the New Energy and Industrial Technology Development Organization (NEDO) of Japan.

PY - 2011/8

Y1 - 2011/8

N2 - Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (DNTT) have been fabricated and characterized. The transistors have field-effect mobilities as large as 2 cm2/V s and an on/off ratio of 108. Owing to the large ionization potential of DNTT, the TFTs show excellent stability for periods of several months of storage in ambient air. Unipolar ring oscillators based on DNTT TFTs with a channel length of 10 μm oscillate with a signal propagation delay as short as 7 μsec per stage at a supply voltage of 5 V. We also show that DNTT TFTs with usefully small channel width/length ratio are able to drive blue organic LEDs to a brightness well above that required for active-matrix displays.

AB - Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (DNTT) have been fabricated and characterized. The transistors have field-effect mobilities as large as 2 cm2/V s and an on/off ratio of 108. Owing to the large ionization potential of DNTT, the TFTs show excellent stability for periods of several months of storage in ambient air. Unipolar ring oscillators based on DNTT TFTs with a channel length of 10 μm oscillate with a signal propagation delay as short as 7 μsec per stage at a supply voltage of 5 V. We also show that DNTT TFTs with usefully small channel width/length ratio are able to drive blue organic LEDs to a brightness well above that required for active-matrix displays.

KW - Air stability

KW - Bias-stress stability

KW - Organic thin-film transistors

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Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

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Keywords

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