Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability

Ute Zschieschang, Frederik Ante, Daniel Kälblein, Tatsuya Yamamoto, Kazuo Takimiya, Hirokazu Kuwabara, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Jan Blochwitz Nimoth, Hagen Klauk

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151 Citations (Scopus)


Organic thin-film transistors based on the vacuum-deposited small-molecule conjugated semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (DNTT) have been fabricated and characterized. The transistors have field-effect mobilities as large as 2 cm2/V s and an on/off ratio of 108. Owing to the large ionization potential of DNTT, the TFTs show excellent stability for periods of several months of storage in ambient air. Unipolar ring oscillators based on DNTT TFTs with a channel length of 10 μm oscillate with a signal propagation delay as short as 7 μsec per stage at a supply voltage of 5 V. We also show that DNTT TFTs with usefully small channel width/length ratio are able to drive blue organic LEDs to a brightness well above that required for active-matrix displays.

Original languageEnglish
Pages (from-to)1370-1375
Number of pages6
JournalOrganic Electronics
Issue number8
Publication statusPublished - 2011 Aug


  • Air stability
  • Bias-stress stability
  • Organic thin-film transistors


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