Direct atomic observation of reactive wetting front on silicon carbide

Ch Iwamoto, S. Tanaka

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Defect formation mechanism in the reaction product during reactive wetting was examined in SiC/Ag-Cu-Ti molten alloy system using in situ high resolution transmission electron microscopy. The orientational relationship between SiC and the reaction product TiC governed the orientation of the TiC, and various defects were formed depending on the TiC nucleation site on the SiC while the nucleated TiC grew and impinged. The mechanism was discussed from the crystallographic point of view.

Original languageEnglish
Pages (from-to)589-592
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - 1999 Jan 1


  • In Situ Experiment
  • Interface
  • Solid/Liquid Reaction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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