Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions

T. Matsumae; Y. Kurashima; H. Takagi; H. Umezawa; E. Higurashi

doi:10.1109/LTB-3D53950.2021.9598377

Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions

T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A polycrystalline diamond substrate treated with a mixture of NH₃ and H₂O₂ was directly bonded with a plasma-activated Si wafer. They formed atomic bonds by annealing at 250 °C after contacting surfaces in atmospheric air. The bonding method would contribute to the future large-scale integration of diamond heat spreaders with electronics.

Original language	English
Title of host publication	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	14
Number of pages	1
ISBN (Electronic)	9781665405676
DOIs	https://doi.org/10.1109/LTB-3D53950.2021.9598377
Publication status	Published - 2021 Oct 5
Externally published	Yes
Event	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan Duration: 2021 Oct 5 → 2021 Oct 11

Publication series

Name	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/Territory	Japan
City	Virtual, Online
Period	21/10/5 → 21/10/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LTB-3D53950.2021.9598377

Cite this

Matsumae, T., Kurashima, Y., Takagi, H., Umezawa, H., & Higurashi, E. (2021). Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 (pp. 14). (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LTB-3D53950.2021.9598377

Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions. / Matsumae, T.; Kurashima, Y.; Takagi, H. et al.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 14 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsumae, T, Kurashima, Y, Takagi, H, Umezawa, H & Higurashi, E 2021, Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions. in 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Institute of Electrical and Electronics Engineers Inc., pp. 14, 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Virtual, Online, Japan, 21/10/5. https://doi.org/10.1109/LTB-3D53950.2021.9598377

Matsumae T, Kurashima Y, Takagi H, Umezawa H, Higurashi E. Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 14. (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). doi: 10.1109/LTB-3D53950.2021.9598377

Matsumae, T. ; Kurashima, Y. ; Takagi, H. et al. / Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 14 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

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abstract = "A polycrystalline diamond substrate treated with a mixture of NH3 and H2O2 was directly bonded with a plasma-activated Si wafer. They formed atomic bonds by annealing at 250 °C after contacting surfaces in atmospheric air. The bonding method would contribute to the future large-scale integration of diamond heat spreaders with electronics.",

author = "T. Matsumae and Y. Kurashima and H. Takagi and H. Umezawa and E. Higurashi",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number 20K15044. Publisher Copyright: {\textcopyright} 2021 IEEE; 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 ; Conference date: 05-10-2021 Through 11-10-2021",

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Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions

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