@article{46210d7a150e4b8693f72723d3c1dfa7,
title = "Direct determination of the interlayer van der Waals bonding force in 2D indium selenide semiconductor crystal",
abstract = "The interlayer van der Waals bonding force in crystalline InSe was directly measured using a mechanical test equipment. The bulk γ-InSe crystal was grown by the temperature difference method under controlled vapor pressure, a unique liquid phase solution crystal growth method with a low and fixed growth temperature. The measured bonding force in the crystal was 20.8 N/cm2, which is greater than that in 2D crystalline GaSe. We also made theoretical discussion of the van der Waals forces in InSe, based on the fluctuations in the electron cloud distributions around the atoms.",
author = "Tadao Tanabe and Chao Tang and Yohei Sato and Yutaka Oyama",
note = "Funding Information: A part of this study is the result of “Fundamental Research and Human Resources Development Program for Nuclear Decommissioning related to Integrity Management of Critical Structures including Primary Containment Vessel and Reactor Building, and Fuel Debris Processing and Radioactive Waste Disposal” carried out under the Center of World Intelligence Project for Nuclear S&T and Human Resource Development by the Ministry of Education, Culture, Sports, Science and Technology of Japan. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = jun,
day = "28",
doi = "10.1063/1.5024313",
language = "English",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "24",
}