Abstract
GaAs micro crystals in line were grown on a sulfur-terminated GaAs surface by low energy focused ion beam. Ga ions, picked out from a liquid Ga ion source, were accelerated up to 10 KV to obtain a focused ion beam. The ions were given a positive bias to reduce their kinetic energy by retarding lens.The Ga ions landed on the surface softly and formed a series of Ga droplets. By subsequent As molecule supply to the Ga droplet, GaAs micro crystals in line were grown. This method was found to be useful to make fine structures directly on the semiconductor materials.
| Original language | English |
|---|---|
| Pages (from-to) | 211-216 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 448 |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering