Direct Ga deposition by low-energy focused ion-beam system

T. Chikyow; N. Koguchi; A. Shikanai

doi:10.1016/S0039-6028(97)00327-0

Direct Ga deposition by low-energy focused ion-beam system

T. Chikyow, N. Koguchi, A. Shikanai

Research output: Contribution to journal › Article › peer-review

Abstract

Ga droplets were formed in line on a sulfur-terminated GaAs surface using a low-energy focused ion beam. Ga ions, picked from a liquid Ga ion source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kinetic energy by retarding lenses. The Ga ions softly landed on the surface and formed a series of Ga droplets. This method was found to be useful in making fine structures directly on semiconductor materials.

Original language	English
Pages (from-to)	254-258
Number of pages	5
Journal	Surface Science
Volume	386
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(97)00327-0
Publication status	Published - 1997 Oct 1
Externally published	Yes

Keywords

Ga droplet
GaAs
Low-energy focused ion beam
Selective growth

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(97)00327-0

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abstract = "Ga droplets were formed in line on a sulfur-terminated GaAs surface using a low-energy focused ion beam. Ga ions, picked from a liquid Ga ion source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kinetic energy by retarding lenses. The Ga ions softly landed on the surface and formed a series of Ga droplets. This method was found to be useful in making fine structures directly on semiconductor materials.",

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AU - Chikyow, T.

AU - Koguchi, N.

AU - Shikanai, A.

PY - 1997/10/1

Y1 - 1997/10/1

N2 - Ga droplets were formed in line on a sulfur-terminated GaAs surface using a low-energy focused ion beam. Ga ions, picked from a liquid Ga ion source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kinetic energy by retarding lenses. The Ga ions softly landed on the surface and formed a series of Ga droplets. This method was found to be useful in making fine structures directly on semiconductor materials.

AB - Ga droplets were formed in line on a sulfur-terminated GaAs surface using a low-energy focused ion beam. Ga ions, picked from a liquid Ga ion source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kinetic energy by retarding lenses. The Ga ions softly landed on the surface and formed a series of Ga droplets. This method was found to be useful in making fine structures directly on semiconductor materials.

KW - Ga droplet

KW - GaAs

KW - Low-energy focused ion beam

KW - Selective growth

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JF - Surface Science

IS - 1-3

ER -

Direct Ga deposition by low-energy focused ion-beam system

Abstract

Keywords

ASJC Scopus subject areas

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