@inproceedings{c18e589bfd6c4088a36f10e68261bbe9,
title = "Direct growth of high-quality mono-layer graphene on insulating substrate by advanced plasma CVD",
abstract = "A transfer-free method for growing carrier-density controlled graphene directly on a SiO2 substrate has been realized for the first time by plasma chemical vapor deposition (CVD). Using this method, high-quality single-layer graphene sheets can be selectively grown between a Ni film and the SiO2 substrate. Systematic investigations reveal that the relatively thin Ni layer and plasma CVD are critical to the success of this unique method of graphene growth.",
keywords = "Direct growth, Graphene, Plasma CVD",
author = "Toshiaki Kato and Rikizo Hatakeyama",
year = "2012",
doi = "10.1109/NANO.2012.6321934",
language = "English",
isbn = "9781467321983",
series = "Proceedings of the IEEE Conference on Nanotechnology",
booktitle = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012",
note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",
}