TY - GEN
T1 - Direct liquid cooling module with high reliability solder joining technology for automotive applications
AU - Morozumi, Akira
AU - Hokazono, Hiroaki
AU - Nishimura, Yoshitaka
AU - Ikeda, Yoshinari
AU - Nabetani, Yoichi
AU - Takahashi, Yoshikazu
PY - 2013
Y1 - 2013
N2 - We developed the direct-liquid-cooling IGBT module which enabled downsizing of a power control unit for HEV system and high reliability simultaneously. This module eliminates thermal grease by unifying a ceramic substrate and a heat sink. It contributes this module realized the reduction of thermal resistance 30 % compared to the conventional indirect liquid cooling type. High thermal conductive Si3N4 ceramics for the substrate and lightweight aluminum heat sink that are suitable for automotive use demand are applied. The technological challenge of this module is to overcome the decrease of the reliability of the joint by large CTE mismatch between substrate and heat sink. We developed the Sn-Sb based solder material which can attain high reliability for automotive use with large CTE mismatch components. And IGBT module with this new solder is applied to HEV.
AB - We developed the direct-liquid-cooling IGBT module which enabled downsizing of a power control unit for HEV system and high reliability simultaneously. This module eliminates thermal grease by unifying a ceramic substrate and a heat sink. It contributes this module realized the reduction of thermal resistance 30 % compared to the conventional indirect liquid cooling type. High thermal conductive Si3N4 ceramics for the substrate and lightweight aluminum heat sink that are suitable for automotive use demand are applied. The technological challenge of this module is to overcome the decrease of the reliability of the joint by large CTE mismatch between substrate and heat sink. We developed the Sn-Sb based solder material which can attain high reliability for automotive use with large CTE mismatch components. And IGBT module with this new solder is applied to HEV.
UR - http://www.scopus.com/inward/record.url?scp=84893323136&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893323136&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2013.6694408
DO - 10.1109/ISPSD.2013.6694408
M3 - Conference contribution
AN - SCOPUS:84893323136
SN - 9781467351348
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 109
EP - 112
BT - 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
Y2 - 26 May 2013 through 30 May 2013
ER -