TY - GEN
T1 - Direct multichip-to-wafer 3D integration technology using flip-chip self-assembly of NCF-covered known good dies
AU - Ito, Yuka
AU - Murugesan, Mariappan
AU - Fukushima, Takafumi
AU - Lee, Kang Wook
AU - Choki, Koji
AU - Tanaka, Tetsu
AU - Koyanagi, Mitsumasa
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/9/11
Y1 - 2014/9/11
N2 - We demonstrated surface tension-driven self-assembly and microbump bonding using NCF (non-conductive film)-covered chips with Cu/Sn-Ag microbumps for highthroughput and high-yield direct multichip-to-wafer 3D integration. The NCF is a promising candidate to completely fill gaps between fine-pitch microbumps, and is essential for realizing highly-reliable microbump-to-microbump interconnections. Here, by applying the self-assembly method with strong water surface tension, the NCF-covered chips were precisely aligned to hydrophilic assembly sites defined on host Si substrates in a face-down manner with alignment accuracies of approximately 1 μm. The self-assembled chips having Cu/Sn-Ag microbumps covered with NCF were thermally compressed to obtain electrical joints between the chips and substrate after the self-assembly process. The resulting daisy chains showed good electrical characteristics with contact resistance of 53 mΩ/joint.
AB - We demonstrated surface tension-driven self-assembly and microbump bonding using NCF (non-conductive film)-covered chips with Cu/Sn-Ag microbumps for highthroughput and high-yield direct multichip-to-wafer 3D integration. The NCF is a promising candidate to completely fill gaps between fine-pitch microbumps, and is essential for realizing highly-reliable microbump-to-microbump interconnections. Here, by applying the self-assembly method with strong water surface tension, the NCF-covered chips were precisely aligned to hydrophilic assembly sites defined on host Si substrates in a face-down manner with alignment accuracies of approximately 1 μm. The self-assembled chips having Cu/Sn-Ag microbumps covered with NCF were thermally compressed to obtain electrical joints between the chips and substrate after the self-assembly process. The resulting daisy chains showed good electrical characteristics with contact resistance of 53 mΩ/joint.
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U2 - 10.1109/ECTC.2014.6897434
DO - 10.1109/ECTC.2014.6897434
M3 - Conference contribution
AN - SCOPUS:84907894769
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1148
EP - 1153
BT - Proceedings - Electronic Components and Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th Electronic Components and Technology Conference, ECTC 2014
Y2 - 27 May 2014 through 30 May 2014
ER -