Abstract
Sapphire was compressed at 1400°C to activate basal slip, and the core structure of introduced basal dislocations was directly observed by HRTEM from a direction parallel to the dislocation line. It was confirmed that the basal dislocation dissociates into two half partial dislocations by the self-climb mechanism as suggested in a previous report. The two partials separated with a certain distance along the [0001] direction, which is normal to the glide plane. On the other hand, it was found that glide dissociation is not developed in the basal dislocation. This result implies that after the glide motion of the basal dislocation had stopped, glide dissociation makes a change to climb dissociation in the core of the dislocation.
Original language | English |
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Pages (from-to) | 101-108 |
Number of pages | 8 |
Journal | Acta Materialia |
Volume | 50 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2002 Jan 8 |
Externally published | Yes |
Keywords
- Dislocations
- High temperature
- High-resolution transmission electron microscopy (HRTEM)
- Sapphire (α-AlO)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys