For today's silicon based devices, understanding the SiO 2/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO 2/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO2/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties.
- Density functional calculations
- Semiconductor-insulator interfaces
- Silicon oxides
- X-ray emission