Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface

Y. Yamashita; S. Yamamoto; K. Mukai; J. Yoshinobu; Y. Harada; T. Tokushima; T. Takeuchi; Y. Takata; S. Shin; K. Akagi; S. Tsuneyuki

doi:10.1380/ejssnt.2006.280

Direct observation of the site-specific valence electronic structure at SiO₂/Si(111) interface

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, S. Tsuneyuki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

For today's silicon based devices, understanding the SiO ₂/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO ₂/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO₂/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties.

Original language	English
Pages (from-to)	280-284
Number of pages	5
Journal	e-Journal of Surface Science and Nanotechnology
Volume	4
DOIs	https://doi.org/10.1380/ejssnt.2006.280
Publication status	Published - 2006 Mar 24

Keywords

Density functional calculations
Interface
Semiconductor-insulator interfaces
Silicon
Silicon oxides
X-ray emission

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10.1380/ejssnt.2006.280

Cite this

@article{8636b020e29f4697920c91da38f675a6,

title = "Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface",

abstract = "For today's silicon based devices, understanding the SiO 2/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO 2/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO2/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties.",

keywords = "Density functional calculations, Interface, Semiconductor-insulator interfaces, Silicon, Silicon oxides, X-ray emission",

author = "Y. Yamashita and S. Yamamoto and K. Mukai and J. Yoshinobu and Y. Harada and T. Tokushima and T. Takeuchi and Y. Takata and S. Shin and K. Akagi and S. Tsuneyuki",

year = "2006",

month = mar,

day = "24",

doi = "10.1380/ejssnt.2006.280",

language = "English",

volume = "4",

pages = "280--284",

journal = "e-Journal of Surface Science and Nanotechnology",

issn = "1348-0391",

publisher = "The Japan Society of Vacuum and Surface Science",

}

TY - JOUR

T1 - Direct observation of the site-specific valence electronic structure at SiO2/Si(111) interface

AU - Yamashita, Y.

AU - Yamamoto, S.

AU - Mukai, K.

AU - Yoshinobu, J.

AU - Harada, Y.

AU - Tokushima, T.

AU - Takeuchi, T.

AU - Takata, Y.

AU - Shin, S.

AU - Akagi, K.

AU - Tsuneyuki, S.

PY - 2006/3/24

Y1 - 2006/3/24

N2 - For today's silicon based devices, understanding the SiO 2/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO 2/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO2/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties.

AB - For today's silicon based devices, understanding the SiO 2/Si(111) interface on atomic level is an important subject for fabricating superior devices. However, despite of many studies on the SiO 2/Si(111) interface, the interfacial valence electronic states have been typically evaluated as the average and not as individual states. In the present study, we successfully observed valence electronic states of particular atoms at the SiO2/Si(111) interface for the first time using soft x-ray absorption and emission spectroscopy. In addition, comparing the experimental results to first-principles calculations revealed local interfacial properties.

KW - Density functional calculations

KW - Interface

KW - Semiconductor-insulator interfaces

KW - Silicon

KW - Silicon oxides

KW - X-ray emission

UR - http://www.scopus.com/inward/record.url?scp=33645235138&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645235138&partnerID=8YFLogxK

U2 - 10.1380/ejssnt.2006.280

DO - 10.1380/ejssnt.2006.280

M3 - Article

AN - SCOPUS:33645235138

SN - 1348-0391

VL - 4

SP - 280

EP - 284

JO - e-Journal of Surface Science and Nanotechnology

JF - e-Journal of Surface Science and Nanotechnology

ER -

Direct observation of the site-specific valence electronic structure at SiO₂/Si(111) interface

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Keywords

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