Abstract
A method for determining the phase of the X-ray specular reflection using the intensity modulation caused by a Bragg reflection is proposed. The method was applied to a Si(001) single crystal covered with a layer of native oxide a few nanometers thick. Measurement of intensity along the 00 rod (specular reflection) under excitation of the 113 Bragg reflection was carried out in the so-called (+,-) parallel arrangement, and intensity modulation of the specular reflection was observed. The phase of the specular reflection from the layer of native oxide was directly determined from the experimentally obtained modulation profile.
| Original language | English |
|---|---|
| Pages (from-to) | L592-L594 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 41 |
| Issue number | 5 B |
| DOIs | |
| Publication status | Published - 2002 May 15 |
Keywords
- Amorphous thin films
- Phase problem
- Surface structure
- Thin film structures
- X-ray diffraction