Direct wafer bonding of SiC-SiC at room temperature by SAB method

F. Mu; K. Iguchi; H. Nakazawa; Y. Takahashi; M. Fujino; T. Suga

doi:10.1149/07509.0077ecst

Direct wafer bonding of SiC-SiC at room temperature by SAB method

F. Mu, K. Iguchi, H. Nakazawa, Y. Takahashi, M. Fujino, T. Suga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m² was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.

Original language	English
Title of host publication	Semiconductor Wafer Bonding
Subtitle of host publication	Science, Technology and Applications 14
Editors	T. Suga, H. Baumgart, F. Fournel, M. S. Goorsky, K. D. Hobart, R. Knechtel, C. S. Tan
Publisher	Electrochemical Society Inc.
Pages	77-83
Number of pages	7
Edition	9
ISBN (Electronic)	9781607687269, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07509.0077ecst
Publication status	Published - 2016
Externally published	Yes
Event	Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7

Publication series

Name	ECS Transactions
Number	9
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/07509.0077ecst

Cite this

Mu, F., Iguchi, K., Nakazawa, H., Takahashi, Y., Fujino, M., & Suga, T. (2016). Direct wafer bonding of SiC-SiC at room temperature by SAB method. In T. Suga, H. Baumgart, F. Fournel, M. S. Goorsky, K. D. Hobart, R. Knechtel, & C. S. Tan (Eds.), Semiconductor Wafer Bonding: Science, Technology and Applications 14 (9 ed., pp. 77-83). (ECS Transactions; Vol. 75, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/07509.0077ecst

Direct wafer bonding of SiC-SiC at room temperature by SAB method. / Mu, F.; Iguchi, K.; Nakazawa, H. et al.
Semiconductor Wafer Bonding: Science, Technology and Applications 14. ed. / T. Suga; H. Baumgart; F. Fournel; M. S. Goorsky; K. D. Hobart; R. Knechtel; C. S. Tan. 9. ed. Electrochemical Society Inc., 2016. p. 77-83 (ECS Transactions; Vol. 75, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mu, F, Iguchi, K, Nakazawa, H, Takahashi, Y, Fujino, M & Suga, T 2016, Direct wafer bonding of SiC-SiC at room temperature by SAB method. in T Suga, H Baumgart, F Fournel, MS Goorsky, KD Hobart, R Knechtel & CS Tan (eds), Semiconductor Wafer Bonding: Science, Technology and Applications 14. 9 edn, ECS Transactions, no. 9, vol. 75, Electrochemical Society Inc., pp. 77-83, Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07509.0077ecst

Mu F, Iguchi K, Nakazawa H, Takahashi Y, Fujino M, Suga T. Direct wafer bonding of SiC-SiC at room temperature by SAB method. In Suga T, Baumgart H, Fournel F, Goorsky MS, Hobart KD, Knechtel R, Tan CS, editors, Semiconductor Wafer Bonding: Science, Technology and Applications 14. 9 ed. Electrochemical Society Inc. 2016. p. 77-83. (ECS Transactions; 9). doi: 10.1149/07509.0077ecst

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abstract = "In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.",

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AU - Mu, F.

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AU - Suga, T.

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N2 - In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.

AB - In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.

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Direct wafer bonding of SiC-SiC at room temperature by SAB method

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