TY - JOUR
T1 - Discharge instability at patterned conductive layers on insulating substrates during pulsed-plasma chemical vapor deposition under near atmospheric pressures
AU - Inayoshi, Yohei
AU - Fukidome, Hirokazu
AU - Nakajima, Setsuo
AU - Uehara, Tsuyoshi
AU - Toyoshima, Yasutake
AU - Suemitsu, Maki
PY - 2013/4/6
Y1 - 2013/4/6
N2 - Discharge instability at patterned conductive layers on insulating substrates during pulsed-plasma chemical vapor deposition under near atmospheric pressures was studied by observing the distribution of plasma damage spots in the grown film. Instability of the discharge is found to be enhanced at conductive layers, and the density and the size of the plasma damage spots vary with the shape and the size of the conductive pattern. Based on these observations, we propose a simple model, uniformly diluted charge (UDC) model, to explain the damage distribution within the conductive pattern.
AB - Discharge instability at patterned conductive layers on insulating substrates during pulsed-plasma chemical vapor deposition under near atmospheric pressures was studied by observing the distribution of plasma damage spots in the grown film. Instability of the discharge is found to be enhanced at conductive layers, and the density and the size of the plasma damage spots vary with the shape and the size of the conductive pattern. Based on these observations, we propose a simple model, uniformly diluted charge (UDC) model, to explain the damage distribution within the conductive pattern.
KW - Chemical vapor deposition
KW - Dielectric Barrier Discharge
KW - Discharge instability
KW - Plasma
KW - Silicon nitride
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U2 - 10.1380/ejssnt.2013.47
DO - 10.1380/ejssnt.2013.47
M3 - Article
AN - SCOPUS:84876029021
SN - 1348-0391
VL - 11
SP - 47
EP - 52
JO - e-Journal of Surface Science and Nanotechnology
JF - e-Journal of Surface Science and Nanotechnology
ER -