Dislocation free gate process using in-situ doped polysilicon thin films by crystallization-induced stress of the films

Chiemi M. Hashimoto, Hideo Miura, Kyoichiro Asayama, Hiroyuki Ohta, Shuji Ikeda

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)
Original languageEnglish
Article number1009600
JournalDevice Research Conference - Conference Digest, DRC
VolumePart F146191
Publication statusPublished - 1993
Event51st Annual Device Research Conference, DRC 1993 - Santa Barbara, United States
Duration: 1993 Jun 211993 Jun 23

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