Dislocation-related optical absorption in plastically deformed GaN

Hiroki Hasegawa; Yasushi Kamimura; Keiichi Edagawa; Ichiro Yonenaga

doi:10.1063/1.2756074

Dislocation-related optical absorption in plastically deformed GaN

Hiroki Hasegawa, Yasushi Kamimura, Keiichi Edagawa, Ichiro Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Optical absorption spectra have been measured for plastically deformed GaN to investigate effects of dislocations. The interband absorption edge has been observed to shift noticeably to lower photon energy by deformation, which has been analyzed based on a model of the Franz-Keldysh effect by the electric fields associated with charged dislocations. This model has satisfactorily reproduced the observed absorption spectra. In a lower energy region, a decrease in free-carrier absorption by deformation has been observed, which is partly attributable to the decrease in carrier concentration by carrier trapping at dislocation states.

Original language	English
Article number	026103
Journal	Journal of Applied Physics
Volume	102
Issue number	2
DOIs	https://doi.org/10.1063/1.2756074
Publication status	Published - 2007 Aug 7

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2756074

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AU - Hasegawa, Hiroki

AU - Kamimura, Yasushi

AU - Edagawa, Keiichi

AU - Yonenaga, Ichiro

PY - 2007/8/7

Y1 - 2007/8/7

N2 - Optical absorption spectra have been measured for plastically deformed GaN to investigate effects of dislocations. The interband absorption edge has been observed to shift noticeably to lower photon energy by deformation, which has been analyzed based on a model of the Franz-Keldysh effect by the electric fields associated with charged dislocations. This model has satisfactorily reproduced the observed absorption spectra. In a lower energy region, a decrease in free-carrier absorption by deformation has been observed, which is partly attributable to the decrease in carrier concentration by carrier trapping at dislocation states.

AB - Optical absorption spectra have been measured for plastically deformed GaN to investigate effects of dislocations. The interband absorption edge has been observed to shift noticeably to lower photon energy by deformation, which has been analyzed based on a model of the Franz-Keldysh effect by the electric fields associated with charged dislocations. This model has satisfactorily reproduced the observed absorption spectra. In a lower energy region, a decrease in free-carrier absorption by deformation has been observed, which is partly attributable to the decrease in carrier concentration by carrier trapping at dislocation states.

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Dislocation-related optical absorption in plastically deformed GaN

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