Velocities of dislocations in single crystal Ge1-xSix alloy semiconductors with x=0.004-0.022 grown by the Czochralski method were investigated by means of etch pit technique in the temperature range 450-700°C and the stress range 3-20 MPa. The dislocation velocity in the GeSi decreases monotonically with an increase in the Si content, reaching about a half of that in Ge at x=0.022. The dependencies of the dislocation velocity on stress and temperature in the alloys are expressed by the same type of empirical equation as those in other elemental and compound semiconductors.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1996 Aug 26|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)