Dislocation velocity in GeSi alloy

I. Yonenaga; Koji Sumino

doi:10.1063/1.117386

Dislocation velocity in GeSi alloy

I. Yonenaga, Koji Sumino

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Velocities of dislocations in single crystal Ge_1-xSi_x alloy semiconductors with x=0.004-0.022 grown by the Czochralski method were investigated by means of etch pit technique in the temperature range 450-700°C and the stress range 3-20 MPa. The dislocation velocity in the GeSi decreases monotonically with an increase in the Si content, reaching about a half of that in Ge at x=0.022. The dependencies of the dislocation velocity on stress and temperature in the alloys are expressed by the same type of empirical equation as those in other elemental and compound semiconductors.

Original language	English
Pages (from-to)	1264-1266
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	9
DOIs	https://doi.org/10.1063/1.117386
Publication status	Published - 1996 Aug 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AB - Velocities of dislocations in single crystal Ge1-xSix alloy semiconductors with x=0.004-0.022 grown by the Czochralski method were investigated by means of etch pit technique in the temperature range 450-700°C and the stress range 3-20 MPa. The dislocation velocity in the GeSi decreases monotonically with an increase in the Si content, reaching about a half of that in Ge at x=0.022. The dependencies of the dislocation velocity on stress and temperature in the alloys are expressed by the same type of empirical equation as those in other elemental and compound semiconductors.

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Dislocation velocity in GeSi alloy

Abstract

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