Dissociation Degree of SiH4 and film Deposition Rate under Double Tubed Coaxial Line Type Microwave Plasma CVD

Isamu Kato; Katsumi Ebashi; Noriharu Suematsu

doi:10.1541/ieejfms1972.107.331

Dissociation Degree of SiH₄ and film Deposition Rate under Double Tubed Coaxial Line Type Microwave Plasma CVD

Isamu Kato, Katsumi Ebashi, Noriharu Suematsu

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	331-338
Number of pages	8
Journal	IEEJ Transactions on Fundamentals and Materials
Volume	107
Issue number	7
DOIs	https://doi.org/10.1541/ieejfms1972.107.331
Publication status	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1541/ieejfms1972.107.331

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title = "Dissociation Degree of SiH4 and film Deposition Rate under Double Tubed Coaxial Line Type Microwave Plasma CVD",

author = "Isamu Kato and Katsumi Ebashi and Noriharu Suematsu",

year = "1987",

doi = "10.1541/ieejfms1972.107.331",

language = "English",

volume = "107",

pages = "331--338",

journal = "IEEJ Transactions on Fundamentals and Materials",

issn = "0385-4205",

publisher = "The Institute of Electrical Engineers of Japan",

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AU - Kato, Isamu

AU - Ebashi, Katsumi

AU - Suematsu, Noriharu

PY - 1987

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DO - 10.1541/ieejfms1972.107.331

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SN - 0385-4205

VL - 107

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JO - IEEJ Transactions on Fundamentals and Materials

JF - IEEJ Transactions on Fundamentals and Materials

IS - 7

ER -

Dissociation Degree of SiH4 and film Deposition Rate under Double Tubed Coaxial Line Type Microwave Plasma CVD

ASJC Scopus subject areas

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Dissociation Degree of SiH₄ and film Deposition Rate under Double Tubed Coaxial Line Type Microwave Plasma CVD