Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C2H2/, and MMS/Si(100)

Hideki Nakazawa; Maki Suemitsu

doi:10.1016/S0169-4332(00)00182-3

Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C₂H₂/, and MMS/Si(100)

Hideki Nakazawa, Maki Suemitsu

Research output: Contribution to journal › Conference article › peer-review

31 Citations (Scopus)

Abstract

Dissociative adsorption of monomethylsilane (MMS), a promising precursor gas for low-temperature SiC, has been investigated on Si(100) by using temperature-programmed desorption (TPD) method after its comparison with H/ and C₂H₂/Si(100) surfaces. For both MMS/ and C₂H₂/Si(100), the β₁ peak from SiH species showed a shift to higher temperatures in the presence of surface C atoms, while two new peaks appeared separately for the two gases: γ peak (approximately 640 °C) for the C₂H₂/ and δ peak (approximately 870 °C) for the MMS/Si(100). The γ peak is suggested to be from hydrogen desorption from SiH species at which a C atom is inserted to its backbond. The δ peak is related to desorption from surface CH_x species. The absence of the γ peak on MMS/Si(100) suggests absence of atomic exchange between surface C and substrate Si atoms on its adsorption.

Original language	English
Pages (from-to)	139-145
Number of pages	7
Journal	Applied Surface Science
Volume	162
DOIs	https://doi.org/10.1016/S0169-4332(00)00182-3
Publication status	Published - 2000 Aug 1
Externally published	Yes
Event	5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France Duration: 1999 Jul 6 → 1999 Jul 9

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(00)00182-3

Cite this

@article{6fabb0810f134d609ec0463a0b3f6e91,

title = "Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C2H2/, and MMS/Si(100)",

abstract = "Dissociative adsorption of monomethylsilane (MMS), a promising precursor gas for low-temperature SiC, has been investigated on Si(100) by using temperature-programmed desorption (TPD) method after its comparison with H/ and C2H2/Si(100) surfaces. For both MMS/ and C2H2/Si(100), the β1 peak from SiH species showed a shift to higher temperatures in the presence of surface C atoms, while two new peaks appeared separately for the two gases: γ peak (approximately 640 °C) for the C2H2/ and δ peak (approximately 870 °C) for the MMS/Si(100). The γ peak is suggested to be from hydrogen desorption from SiH species at which a C atom is inserted to its backbond. The δ peak is related to desorption from surface CHx species. The absence of the γ peak on MMS/Si(100) suggests absence of atomic exchange between surface C and substrate Si atoms on its adsorption.",

author = "Hideki Nakazawa and Maki Suemitsu",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (No. 09450015) from the Ministry of Education, Science, Sports and Culture, Japan.; 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) ; Conference date: 06-07-1999 Through 09-07-1999",

year = "2000",

month = aug,

day = "1",

doi = "10.1016/S0169-4332(00)00182-3",

language = "English",

volume = "162",

pages = "139--145",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C2H2/, and MMS/Si(100)

AU - Nakazawa, Hideki

AU - Suemitsu, Maki

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (No. 09450015) from the Ministry of Education, Science, Sports and Culture, Japan.

PY - 2000/8/1

Y1 - 2000/8/1

N2 - Dissociative adsorption of monomethylsilane (MMS), a promising precursor gas for low-temperature SiC, has been investigated on Si(100) by using temperature-programmed desorption (TPD) method after its comparison with H/ and C2H2/Si(100) surfaces. For both MMS/ and C2H2/Si(100), the β1 peak from SiH species showed a shift to higher temperatures in the presence of surface C atoms, while two new peaks appeared separately for the two gases: γ peak (approximately 640 °C) for the C2H2/ and δ peak (approximately 870 °C) for the MMS/Si(100). The γ peak is suggested to be from hydrogen desorption from SiH species at which a C atom is inserted to its backbond. The δ peak is related to desorption from surface CHx species. The absence of the γ peak on MMS/Si(100) suggests absence of atomic exchange between surface C and substrate Si atoms on its adsorption.

AB - Dissociative adsorption of monomethylsilane (MMS), a promising precursor gas for low-temperature SiC, has been investigated on Si(100) by using temperature-programmed desorption (TPD) method after its comparison with H/ and C2H2/Si(100) surfaces. For both MMS/ and C2H2/Si(100), the β1 peak from SiH species showed a shift to higher temperatures in the presence of surface C atoms, while two new peaks appeared separately for the two gases: γ peak (approximately 640 °C) for the C2H2/ and δ peak (approximately 870 °C) for the MMS/Si(100). The γ peak is suggested to be from hydrogen desorption from SiH species at which a C atom is inserted to its backbond. The δ peak is related to desorption from surface CHx species. The absence of the γ peak on MMS/Si(100) suggests absence of atomic exchange between surface C and substrate Si atoms on its adsorption.

UR - http://www.scopus.com/inward/record.url?scp=0034248424&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034248424&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(00)00182-3

DO - 10.1016/S0169-4332(00)00182-3

M3 - Conference article

AN - SCOPUS:0034248424

SN - 0169-4332

VL - 162

SP - 139

EP - 145

JO - Applied Surface Science

JF - Applied Surface Science

T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)

Y2 - 6 July 1999 through 9 July 1999

ER -

Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C₂H₂/, and MMS/Si(100)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this