Domain wall creep in (Ga,Mn)As

A. Kanda; A. Suzuki; F. Matsukura; H. Ohno

doi:10.1063/1.3467048

Domain wall creep in (Ga,Mn)As

A. Kanda, A. Suzuki, F. Matsukura, H. Ohno

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Tohoku University

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We have compared the scaling exponents in scaling formula for magnetic domain wall creep by measuring the magnetic-field induced domain wall velocity of (Ga,Mn)As layers grown on (In,Al)As semistep-graded buffer layer and (In,Ga)As buffer layer. The different critical exponents for the two (Ga,Mn)As layers indicate that the observed creep motions belong to different universality classes, which are found to be governed by the degree of surface roughness due to crosshatch dislocation introduced during epitaxial growth. Domain wall creep motion in (Ga,Mn)As layer grown on (In,Al)As with flatter surface belongs to random-field disorder, whereas that in (In,Ga)As to random-bond disorder.

Original language	English
Article number	032504
Journal	Applied Physics Letters
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.3467048
Publication status	Published - 2010 Jul 19

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abstract = "We have compared the scaling exponents in scaling formula for magnetic domain wall creep by measuring the magnetic-field induced domain wall velocity of (Ga,Mn)As layers grown on (In,Al)As semistep-graded buffer layer and (In,Ga)As buffer layer. The different critical exponents for the two (Ga,Mn)As layers indicate that the observed creep motions belong to different universality classes, which are found to be governed by the degree of surface roughness due to crosshatch dislocation introduced during epitaxial growth. Domain wall creep motion in (Ga,Mn)As layer grown on (In,Al)As with flatter surface belongs to random-field disorder, whereas that in (In,Ga)As to random-bond disorder.",

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note = "Funding Information: The authors thank M. Yamanouchi for discussion. This work was supported in part by a Grant-in-Aid for Scientific Research (Grant No. 20360001) from JSPS, the GCOE Program at Tohoku University, ASPIMATT program from JST, and JSPS through its FIRST program.",

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AU - Suzuki, A.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors thank M. Yamanouchi for discussion. This work was supported in part by a Grant-in-Aid for Scientific Research (Grant No. 20360001) from JSPS, the GCOE Program at Tohoku University, ASPIMATT program from JST, and JSPS through its FIRST program.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - We have compared the scaling exponents in scaling formula for magnetic domain wall creep by measuring the magnetic-field induced domain wall velocity of (Ga,Mn)As layers grown on (In,Al)As semistep-graded buffer layer and (In,Ga)As buffer layer. The different critical exponents for the two (Ga,Mn)As layers indicate that the observed creep motions belong to different universality classes, which are found to be governed by the degree of surface roughness due to crosshatch dislocation introduced during epitaxial growth. Domain wall creep motion in (Ga,Mn)As layer grown on (In,Al)As with flatter surface belongs to random-field disorder, whereas that in (In,Ga)As to random-bond disorder.

AB - We have compared the scaling exponents in scaling formula for magnetic domain wall creep by measuring the magnetic-field induced domain wall velocity of (Ga,Mn)As layers grown on (In,Al)As semistep-graded buffer layer and (In,Ga)As buffer layer. The different critical exponents for the two (Ga,Mn)As layers indicate that the observed creep motions belong to different universality classes, which are found to be governed by the degree of surface roughness due to crosshatch dislocation introduced during epitaxial growth. Domain wall creep motion in (Ga,Mn)As layer grown on (In,Al)As with flatter surface belongs to random-field disorder, whereas that in (In,Ga)As to random-bond disorder.

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Domain wall creep in (Ga,Mn)As

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