TY - JOUR
T1 - Domain-wall dynamics in translationally nonivariant nanowires
T2 - Theory and applications
AU - Tretiakov, O. A.
AU - Liu, Y.
AU - Abanov, Ar
PY - 2012/6/11
Y1 - 2012/6/11
N2 - We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations along the wire, such as disorder or change in the wire shape. We show that the effective equations of motion are very general and do not depend on the model details. As an example of their use, we consider an hourglass-shaped nanostrip in detail. A transverse domain wall is trapped in the middle and has two stable magnetization directions. We study the switching between the two directions by short current pulses. We obtain the exact time dependence of the current pulses required to switch the magnetization with the minimal Ohmic losses per switching. Furthermore, we find how the Ohmic losses per switching depend on the switching time for the optimal current pulse. As a result, we show that as a magnetic memory device this nanodevice may be 105 times more energy efficient than the best modern devices.
AB - We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations along the wire, such as disorder or change in the wire shape. We show that the effective equations of motion are very general and do not depend on the model details. As an example of their use, we consider an hourglass-shaped nanostrip in detail. A transverse domain wall is trapped in the middle and has two stable magnetization directions. We study the switching between the two directions by short current pulses. We obtain the exact time dependence of the current pulses required to switch the magnetization with the minimal Ohmic losses per switching. Furthermore, we find how the Ohmic losses per switching depend on the switching time for the optimal current pulse. As a result, we show that as a magnetic memory device this nanodevice may be 105 times more energy efficient than the best modern devices.
UR - http://www.scopus.com/inward/record.url?scp=84862193380&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862193380&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.108.247201
DO - 10.1103/PhysRevLett.108.247201
M3 - Article
AN - SCOPUS:84862193380
SN - 0031-9007
VL - 108
JO - Physical Review Letters
JF - Physical Review Letters
IS - 24
M1 - 247201
ER -