Domain wall resistance in perpendicularly magnetized (Ga,Mn)As

Daichi Chiba; M. Yamanouchi; F. Matsukura; T. Dietl; H. Ohno

doi:10.1016/j.jmmm.2006.10.1119

Domain wall resistance in perpendicularly magnetized (Ga,Mn)As

Daichi Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Domain wall (DW) resistance in perpendicularly magnetized (Ga,Mn)As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance.

Original language	English
Pages (from-to)	2078-2083
Number of pages	6
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.1119
Publication status	Published - 2007 Mar

Keywords

(Ga,Mn)As
Domain wall resistance

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10.1016/j.jmmm.2006.10.1119

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abstract = "Domain wall (DW) resistance in perpendicularly magnetized (Ga,Mn)As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance.",

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author = "Daichi Chiba and M. Yamanouchi and F. Matsukura and T. Dietl and H. Ohno",

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AU - Chiba, Daichi

AU - Yamanouchi, M.

AU - Matsukura, F.

AU - Dietl, T.

AU - Ohno, H.

PY - 2007/3

Y1 - 2007/3

N2 - Domain wall (DW) resistance in perpendicularly magnetized (Ga,Mn)As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance.

AB - Domain wall (DW) resistance in perpendicularly magnetized (Ga,Mn)As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance.

KW - (Ga,Mn)As

KW - Domain wall resistance

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M3 - Article

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EP - 2083

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Domain wall resistance in perpendicularly magnetized (Ga,Mn)As

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Keywords

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