Abstract
The effect of surface treatment in UHV chamber on Q factor of cantilevers with different thickness (60 nm, 170 nm and 500 nm) and different surface orientation was investigated. When length L>30 μm, Q factor is proportional to thickness, surface loss dominates. While L<30 μm, support loss surpasses the surface loss. Heating can remove SiO2 layer and absorbates, and result in an increase of Q factor. Hydrogen termination leads to a larger relative increase of Q factor in thinner structure than in thicker ones. Heating and H exposure improve Q values of Si(100) oriented cantilevers more than Si(110) oriented ones and result in the contrary resonance frequency response for these two surfaces.
| Original language | English |
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| Pages | 235-240 |
| Number of pages | 6 |
| Publication status | Published - 2000 |
| Event | 13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Jpn Duration: 2000 Jan 23 → 2000 Jan 27 |
Conference
| Conference | 13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) |
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| City | Miyazaki, Jpn |
| Period | 00/1/23 → 00/1/27 |