The effect of surface treatment in UHV chamber on Q factor of cantilevers with different thickness (60 nm, 170 nm and 500 nm) and different surface orientation was investigated. When length L>30 μm, Q factor is proportional to thickness, surface loss dominates. While L<30 μm, support loss surpasses the surface loss. Heating can remove SiO2 layer and absorbates, and result in an increase of Q factor. Hydrogen termination leads to a larger relative increase of Q factor in thinner structure than in thicker ones. Heating and H exposure improve Q values of Si(100) oriented cantilevers more than Si(110) oriented ones and result in the contrary resonance frequency response for these two surfaces.
|Number of pages||6|
|Publication status||Published - 2000|
|Event||13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Jpn|
Duration: 2000 Jan 23 → 2000 Jan 27
|Conference||13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000)|
|Period||00/1/23 → 00/1/27|