TY - JOUR
T1 - Doping optimization in InGaAsP DH lasers and improved characteristics in BH lasers grown by MOVPE
AU - Sasaki, T.
AU - Yamada, H.
AU - Takano, S.
AU - Kitamura, M.
AU - Mito, I.
AU - Suzuki, T.
AU - Hoshino, H.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1988
Y1 - 1988
N2 - Zn doping optimization in the cladding layer of InGaAsP/InP DH LDs grown by MOVPE is reported. High Zn doping concentration in the p-InP cladding layer deteriorated the threshold current density and the differential quantum efficiency, which is attributed to Zn diffusion to the active layers. Under optimized Zn doping conditions, 1.5 μm InGaAsP/InP DC-PBH LDs grown entirely by MOVPE are reported with a maximum light output of 46 mW.
AB - Zn doping optimization in the cladding layer of InGaAsP/InP DH LDs grown by MOVPE is reported. High Zn doping concentration in the p-InP cladding layer deteriorated the threshold current density and the differential quantum efficiency, which is attributed to Zn diffusion to the active layers. Under optimized Zn doping conditions, 1.5 μm InGaAsP/InP DC-PBH LDs grown entirely by MOVPE are reported with a maximum light output of 46 mW.
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U2 - 10.1016/0022-0248(88)90628-8
DO - 10.1016/0022-0248(88)90628-8
M3 - Article
AN - SCOPUS:0024104201
SN - 0022-0248
VL - 93
SP - 838
EP - 842
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -