Double Heterostructure Gao.47In0.53As MESFETs with Submicron Gates

Joseph Barnard, Hideo Ohno, Colin E.C. Wood, Lester F. Eastman

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


MESFETs with GAo.47Ino.53As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al0.48In0.52As separated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6pm long gates and gate-to-source separations of 0.8 um exhibited an average gm of 135 mS mm-1 of gate width for Vds = 2V and Vg = 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer beteen the gate metal and the active layer.

Original languageEnglish
Pages (from-to)174-176
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 1980 Sept


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