Double Heterostructure Gao.47In0.53As MESFETs with Submicron Gates

Joseph Barnard; Hideo Ohno; Colin E.C. Wood; Lester F. Eastman

doi:10.1109/EDL.1980.25277

Double Heterostructure Gao.47In0.53As MESFETs with Submicron Gates

Joseph Barnard, Hideo Ohno, Colin E.C. Wood, Lester F. Eastman

Leadership

Cornell University

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

MESFETs with GAo.47Ino.53As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al0.48In0.52As separated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6pm long gates and gate-to-source separations of 0.8 um exhibited an average gm of 135 mS mm-1 of gate width for Vds = 2V and Vg = 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer beteen the gate metal and the active layer.

Original language	English
Pages (from-to)	174-176
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	1
Issue number	9
DOIs	https://doi.org/10.1109/EDL.1980.25277
Publication status	Published - 1980 Sept

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10.1109/EDL.1980.25277

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@article{3938de39d0934d7583cca67e25d51e3d,

title = "Double Heterostructure Gao.47In0.53As MESFETs with Submicron Gates",

abstract = "MESFETs with GAo.47Ino.53As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al0.48In0.52As separated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6pm long gates and gate-to-source separations of 0.8 um exhibited an average gm of 135 mS mm-1 of gate width for Vds = 2V and Vg = 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer beteen the gate metal and the active layer.",

author = "Joseph Barnard and Hideo Ohno and Wood, {Colin E.C.} and Eastman, {Lester F.}",

year = "1980",

month = sep,

doi = "10.1109/EDL.1980.25277",

language = "English",

volume = "1",

pages = "174--176",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Double Heterostructure Gao.47In0.53As MESFETs with Submicron Gates

AU - Barnard, Joseph

AU - Ohno, Hideo

AU - Wood, Colin E.C.

AU - Eastman, Lester F.

PY - 1980/9

Y1 - 1980/9

N2 - MESFETs with GAo.47Ino.53As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al0.48In0.52As separated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6pm long gates and gate-to-source separations of 0.8 um exhibited an average gm of 135 mS mm-1 of gate width for Vds = 2V and Vg = 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer beteen the gate metal and the active layer.

AB - MESFETs with GAo.47Ino.53As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al0.48In0.52As separated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6pm long gates and gate-to-source separations of 0.8 um exhibited an average gm of 135 mS mm-1 of gate width for Vds = 2V and Vg = 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer beteen the gate metal and the active layer.

UR - http://www.scopus.com/inward/record.url?scp=0019060105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019060105&partnerID=8YFLogxK

U2 - 10.1109/EDL.1980.25277

DO - 10.1109/EDL.1980.25277

M3 - Article

AN - SCOPUS:0019060105

SN - 0741-3106

VL - 1

SP - 174

EP - 176

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Double Heterostructure Gao.47In0.53As MESFETs with Submicron Gates

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