Abstract
A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1)high drain sustaining voltage, (2)a reduced short-channel effect, (3)high current drivability, and (4)high reliability. The high current drivability provides high-speed switching.
| Original language | English |
|---|---|
| Pages (from-to) | 226-229 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1988 Dec 1 |
| Event | Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA Duration: 1988 Dec 11 → 1988 Dec 14 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry