Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

Z. H. Yuan; L. Huang; J. F. Feng; Z. C. Wen; D. L. Li; X. F. Han; Takafumi Nakano; T. Yu; Hiroshi Naganuma

doi:10.1063/1.4927840

Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

Z. H. Yuan, L. Huang, J. F. Feng, Z. C. Wen, D. L. Li, X. F. Han, Takafumi Nakano, T. Yu, Hiroshi Naganuma

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir₂₂Mn₇₈ (6)/Ni₈₀Fe₂₀ (t_NiFe20-70)/Ru (0.9)/Co₄₀Fe₄₀B₂₀ (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70nm NiFe at the optimum annealing temperature of 230°C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

Original language	English
Article number	053904
Journal	Journal of Applied Physics
Volume	118
Issue number	5
DOIs	https://doi.org/10.1063/1.4927840
Publication status	Published - 2015 Aug 7

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@article{0dfcd6af7c624d0ba543cd5f97372d70,

title = "Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers",

abstract = "MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir22Mn78 (6)/Ni80Fe20 (tNiFe20-70)/Ru (0.9)/Co40Fe40B20 (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70nm NiFe at the optimum annealing temperature of 230°C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.",

author = "Yuan, {Z. H.} and L. Huang and Feng, {J. F.} and Wen, {Z. C.} and Li, {D. L.} and Han, {X. F.} and Takafumi Nakano and T. Yu and Hiroshi Naganuma",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = aug,

day = "7",

doi = "10.1063/1.4927840",

language = "English",

volume = "118",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

AU - Yuan, Z. H.

AU - Huang, L.

AU - Feng, J. F.

AU - Wen, Z. C.

AU - Li, D. L.

AU - Han, X. F.

AU - Nakano, Takafumi

AU - Yu, T.

AU - Naganuma, Hiroshi

PY - 2015/8/7

Y1 - 2015/8/7

N2 - MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir22Mn78 (6)/Ni80Fe20 (tNiFe20-70)/Ru (0.9)/Co40Fe40B20 (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70nm NiFe at the optimum annealing temperature of 230°C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

AB - MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir22Mn78 (6)/Ni80Fe20 (tNiFe20-70)/Ru (0.9)/Co40Fe40B20 (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70nm NiFe at the optimum annealing temperature of 230°C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=84938651335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938651335&partnerID=8YFLogxK

U2 - 10.1063/1.4927840

DO - 10.1063/1.4927840

M3 - Article

AN - SCOPUS:84938651335

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053904

ER -

Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

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