Drastic improvement in surface flatness properties by using GaAs (111)a substrates in molecular beam epitaxy

Hiroshi Yamaguchi, Yoshikazu Homma, Kiyoshi Kanisawa, Yoshiro Hirayama

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18 Citations (Scopus)


We have studied the surface flatness properties of (111)A planes in both homoepitaxial growth of GaAs on GaAs and highly-mismatched heteroepitaxial growth of InAs and InSb on GaAs by molecular beam epitaxy. The homo-epitaxially grown GaAs (111)A surface has atomically flat terraces as wide as about 1 μm, which make it possible to clearly image the layer-by-layer growth processes of GaAs by in-situ scanning electron microscopy, in contrast with conventionally used (001) surfaces where the high density of steps prevents clear imaging. The surface flatness improvement using (111)A substrates is much more drastic in highly-mismatched hctcroepitaxy. The three-dimensional islanding governed by the Stranski-Rrastanov mechanism is strongly suppressed for the growth of both InAs and InSb on GaAs substrates. The lateral and vertical electron transport properties of Ga(A1)As/InAs/GaAs heterostructurcs are studied, verifying the improved electric properties by using the (111)A substrates. The application for novel hot-electron transistors is clearly demonstrated.

Original languageEnglish
Pages (from-to)635-644
Number of pages10
JournalJapanese Journal of Applied Physics
Issue number2 A
Publication statusPublished - 1999


  • (111)A
  • Dislocations
  • Fermi level pinning
  • GaAs
  • Hot-electron ransistors
  • In-situ observation
  • InAs
  • Scanning electron microscopy
  • Surface flatness
  • Two-dimensional electron systems


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