Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler

Hisashi Kino; Takafumi Fukushima; Tetsu Tanaka

doi:10.1109/3DIC.2016.7970031

Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler

Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Three-dimensional IC (3D IC) is a promising method to enhance IC performance. Conventional 3D ICs consist of vertically stacked several thin IC chips those are electrically connected with lots of through-Si vias (TSVs) and metal microbumps. Metal microbumps are surrounded by organic adhesive. An epoxy-based material, so-called underfill, has been widely used to fill the gap between several chips. In general, coefficient of thermal expansion (CTE) of the underfill material is larger than that of metal microbumps. This CTE mismatch induces local bending stress in thinned IC chips. This local bending stress would affect CMOS circuit in thinned IC chips. Therefore, we should suppress the local bending stress to realize 3D IC with high reliability. In this work, we propose a novel underfill with negative-CTE filler which can suppress the local bending stress in 3D IC.

Original language	English
Title of host publication	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509013999
DOIs	https://doi.org/10.1109/3DIC.2016.7970031
Publication status	Published - 2017 Jul 5
Event	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 - San Francisco, United States Duration: 2016 Nov 8 → 2016 Nov 11

Publication series

Name	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

Conference

Conference	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
Country/Territory	United States
City	San Francisco
Period	16/11/8 → 16/11/11

Keywords

3D IC
local bending stress
microbump
underfill

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10.1109/3DIC.2016.7970031

Cite this

Kino, H., Fukushima, T., & Tanaka, T. (2017). Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler. In 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 Article 7970031 (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC.2016.7970031

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title = "Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler",

abstract = "Three-dimensional IC (3D IC) is a promising method to enhance IC performance. Conventional 3D ICs consist of vertically stacked several thin IC chips those are electrically connected with lots of through-Si vias (TSVs) and metal microbumps. Metal microbumps are surrounded by organic adhesive. An epoxy-based material, so-called underfill, has been widely used to fill the gap between several chips. In general, coefficient of thermal expansion (CTE) of the underfill material is larger than that of metal microbumps. This CTE mismatch induces local bending stress in thinned IC chips. This local bending stress would affect CMOS circuit in thinned IC chips. Therefore, we should suppress the local bending stress to realize 3D IC with high reliability. In this work, we propose a novel underfill with negative-CTE filler which can suppress the local bending stress in 3D IC.",

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author = "Hisashi Kino and Takafumi Fukushima and Tetsu Tanaka",

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Kino, H , Fukushima, T & Tanaka, T 2017, Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler. in 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016., 7970031, 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016, San Francisco, United States, 16/11/8. https://doi.org/10.1109/3DIC.2016.7970031

Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler. / Kino, Hisashi ; Fukushima, Takafumi ; Tanaka, Tetsu.
2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7970031 (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Three-dimensional IC (3D IC) is a promising method to enhance IC performance. Conventional 3D ICs consist of vertically stacked several thin IC chips those are electrically connected with lots of through-Si vias (TSVs) and metal microbumps. Metal microbumps are surrounded by organic adhesive. An epoxy-based material, so-called underfill, has been widely used to fill the gap between several chips. In general, coefficient of thermal expansion (CTE) of the underfill material is larger than that of metal microbumps. This CTE mismatch induces local bending stress in thinned IC chips. This local bending stress would affect CMOS circuit in thinned IC chips. Therefore, we should suppress the local bending stress to realize 3D IC with high reliability. In this work, we propose a novel underfill with negative-CTE filler which can suppress the local bending stress in 3D IC.

AB - Three-dimensional IC (3D IC) is a promising method to enhance IC performance. Conventional 3D ICs consist of vertically stacked several thin IC chips those are electrically connected with lots of through-Si vias (TSVs) and metal microbumps. Metal microbumps are surrounded by organic adhesive. An epoxy-based material, so-called underfill, has been widely used to fill the gap between several chips. In general, coefficient of thermal expansion (CTE) of the underfill material is larger than that of metal microbumps. This CTE mismatch induces local bending stress in thinned IC chips. This local bending stress would affect CMOS circuit in thinned IC chips. Therefore, we should suppress the local bending stress to realize 3D IC with high reliability. In this work, we propose a novel underfill with negative-CTE filler which can suppress the local bending stress in 3D IC.

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Kino H , Fukushima T , Tanaka T. Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler. In 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. 7970031. (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016). doi: 10.1109/3DIC.2016.7970031

Drastic reduction of keep-out-zone in 3D-IC by local stress suppression with negative-CTE filler

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