TY - GEN
T1 - Drastic suppression of the 1/f noise in MOSFETs
T2 - International Conference on Noise and Fluctuations, ICNF 2015
AU - Gaubert, Philippe
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
PY - 2015/10/2
Y1 - 2015/10/2
N2 - A significant reduction of the 1/f noise level has been achieved by the means of a new Metal-Oxide-Semiconductor (MOS) structure and new fabrication processes, opening new horizons for future Very large Scale Integration (VLSI) technology. Furthermore, on account of these investigations, the study of the 1/f noise has been made possible at high drain current. While we might have thought that the 1/f noise could be explained in term of oxide charge and induced mobility fluctuations, the study within this specific operating range revealed the ineffectiveness of the induced mobility fluctuations to accurately model the noise. Instead, better modeling has been achieved through the use of the fundamental fluctuations of mobility of the Hooge theory testifying in favor of the oxide charge and fundamental fluctuations of mobility to explain the 1/f noise in our MOSFETs.
AB - A significant reduction of the 1/f noise level has been achieved by the means of a new Metal-Oxide-Semiconductor (MOS) structure and new fabrication processes, opening new horizons for future Very large Scale Integration (VLSI) technology. Furthermore, on account of these investigations, the study of the 1/f noise has been made possible at high drain current. While we might have thought that the 1/f noise could be explained in term of oxide charge and induced mobility fluctuations, the study within this specific operating range revealed the ineffectiveness of the induced mobility fluctuations to accurately model the noise. Instead, better modeling has been achieved through the use of the fundamental fluctuations of mobility of the Hooge theory testifying in favor of the oxide charge and fundamental fluctuations of mobility to explain the 1/f noise in our MOSFETs.
KW - Accumulation Mode
KW - Hooge Theory
KW - Induced Mobility Fluctuations
KW - Low Frequency Noise
KW - Metal-Oxide-Semiconductor
KW - Oxide Charge Fluctuations
KW - Plasma Process
KW - Salicide
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=84961773682&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961773682&partnerID=8YFLogxK
U2 - 10.1109/ICNF.2015.7288580
DO - 10.1109/ICNF.2015.7288580
M3 - Conference contribution
AN - SCOPUS:84961773682
T3 - 2015 International Conference on Noise and Fluctuations, ICNF 2015
BT - 2015 International Conference on Noise and Fluctuations, ICNF 2015
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 2 June 2015 through 6 June 2015
ER -