Dual-band photodetectors based on interband and intersubband transitions

H. C. Liu; C. Y. Song; A. Shen; M. Gao; E. Dupont; P. J. Poole; Z. R. Wasilewski; M. Buchanan; P. H. Wilson; B. J. Robinson; D. A. Thompson; Y. Ohno; H. Ohno

doi:10.1016/S1350-4495(01)00072-X

Dual-band photodetectors based on interband and intersubband transitions

H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, H. Ohno

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12 Citations (Scopus)

Abstract

We present experimental results on quantum-well photodetectors for visible or near-infrared and middle- or far-infrared dual-band detection. We report on two types of devices based on (1) InGaAs/InP and (2) GaAs/AlGaAs quantum wells. In the first case, InGaAs/InP quantum-well infrared photodetectors (QWIPs) for both near and middle infrared spectra are shown. In the second case, large bandgap top contacts were used on standard GaAs/AlGaAs QWIPs so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two large band gap top contacts were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice. We evaluate and analyze the detector performance. We find that such devices are potentially useful for applications involving dual-band simultaneous detection and imaging.

Original language	English
Pages (from-to)	163-170
Number of pages	8
Journal	Infrared Physics and Technology
Volume	42
Issue number	3-5
DOIs	https://doi.org/10.1016/S1350-4495(01)00072-X
Publication status	Published - 2001 Jun

Keywords

Dual band
Quantum-well infrared photodetector

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10.1016/S1350-4495(01)00072-X

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@article{10293f0d54394e3895040ecd7f91f87b,

title = "Dual-band photodetectors based on interband and intersubband transitions",

abstract = "We present experimental results on quantum-well photodetectors for visible or near-infrared and middle- or far-infrared dual-band detection. We report on two types of devices based on (1) InGaAs/InP and (2) GaAs/AlGaAs quantum wells. In the first case, InGaAs/InP quantum-well infrared photodetectors (QWIPs) for both near and middle infrared spectra are shown. In the second case, large bandgap top contacts were used on standard GaAs/AlGaAs QWIPs so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two large band gap top contacts were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice. We evaluate and analyze the detector performance. We find that such devices are potentially useful for applications involving dual-band simultaneous detection and imaging.",

keywords = "Dual band, Quantum-well infrared photodetector",

author = "Liu, {H. C.} and Song, {C. Y.} and A. Shen and M. Gao and E. Dupont and Poole, {P. J.} and Wasilewski, {Z. R.} and M. Buchanan and Wilson, {P. H.} and Robinson, {B. J.} and Thompson, {D. A.} and Y. Ohno and H. Ohno",

note = "Funding Information: We thank Steven Rolfe for SIMS measurement, and Phillip Chow-Chong and Paul Marshall for device fabrication. The work was supported in part by DREV and DREO of the Department of National Defence.",

year = "2001",

month = jun,

doi = "10.1016/S1350-4495(01)00072-X",

language = "English",

volume = "42",

pages = "163--170",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier",

number = "3-5",

}

TY - JOUR

T1 - Dual-band photodetectors based on interband and intersubband transitions

AU - Liu, H. C.

AU - Song, C. Y.

AU - Shen, A.

AU - Gao, M.

AU - Dupont, E.

AU - Poole, P. J.

AU - Wasilewski, Z. R.

AU - Buchanan, M.

AU - Wilson, P. H.

AU - Robinson, B. J.

AU - Thompson, D. A.

AU - Ohno, Y.

AU - Ohno, H.

N1 - Funding Information: We thank Steven Rolfe for SIMS measurement, and Phillip Chow-Chong and Paul Marshall for device fabrication. The work was supported in part by DREV and DREO of the Department of National Defence.

PY - 2001/6

Y1 - 2001/6

N2 - We present experimental results on quantum-well photodetectors for visible or near-infrared and middle- or far-infrared dual-band detection. We report on two types of devices based on (1) InGaAs/InP and (2) GaAs/AlGaAs quantum wells. In the first case, InGaAs/InP quantum-well infrared photodetectors (QWIPs) for both near and middle infrared spectra are shown. In the second case, large bandgap top contacts were used on standard GaAs/AlGaAs QWIPs so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two large band gap top contacts were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice. We evaluate and analyze the detector performance. We find that such devices are potentially useful for applications involving dual-band simultaneous detection and imaging.

AB - We present experimental results on quantum-well photodetectors for visible or near-infrared and middle- or far-infrared dual-band detection. We report on two types of devices based on (1) InGaAs/InP and (2) GaAs/AlGaAs quantum wells. In the first case, InGaAs/InP quantum-well infrared photodetectors (QWIPs) for both near and middle infrared spectra are shown. In the second case, large bandgap top contacts were used on standard GaAs/AlGaAs QWIPs so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two large band gap top contacts were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice. We evaluate and analyze the detector performance. We find that such devices are potentially useful for applications involving dual-band simultaneous detection and imaging.

KW - Dual band

KW - Quantum-well infrared photodetector

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JO - Infrared Physics and Technology

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Dual-band photodetectors based on interband and intersubband transitions

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