Dual-band photodetectors based on interband and intersubband transitions

H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We present experimental results on quantum-well photodetectors for visible or near-infrared and middle- or far-infrared dual-band detection. We report on two types of devices based on (1) InGaAs/InP and (2) GaAs/AlGaAs quantum wells. In the first case, InGaAs/InP quantum-well infrared photodetectors (QWIPs) for both near and middle infrared spectra are shown. In the second case, large bandgap top contacts were used on standard GaAs/AlGaAs QWIPs so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two large band gap top contacts were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice. We evaluate and analyze the detector performance. We find that such devices are potentially useful for applications involving dual-band simultaneous detection and imaging.

Original languageEnglish
Pages (from-to)163-170
Number of pages8
JournalInfrared Physics and Technology
Issue number3-5
Publication statusPublished - 2001 Jun


  • Dual band
  • Quantum-well infrared photodetector


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