Dual bias feed SiGe HBT low noise linear amplifier

Eiji Taniguchi, Kenichi Maeda, Takayuki Ikushima, Keiichi Sadahiro, Kenji Itoh, Noriharu Suematsu, Tadashi Takagi

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.

Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2001
EventInternational Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States
Duration: 2001 May 202001 May 25


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