TY - JOUR
T1 - Dual bias feed SiGe HBT low noise linear amplifier
AU - Taniguchi, Eiji
AU - Maeda, Kenichi
AU - Ikushima, Takayuki
AU - Sadahiro, Keiichi
AU - Itoh, Kenji
AU - Suematsu, Noriharu
AU - Takagi, Tadashi
PY - 2001
Y1 - 2001
N2 - A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.
AB - A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.
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M3 - Conference article
AN - SCOPUS:0035689741
SN - 0149-645X
VL - 3
SP - 285
EP - 288
JO - IEEE MTT-S International Microwave Symposium Digest
JF - IEEE MTT-S International Microwave Symposium Digest
T2 - International Microwave Symposium Digest IEEE-MTT-S 2001
Y2 - 20 May 2001 through 25 May 2001
ER -