A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.
|Number of pages
|Published - 2001
|2001 IEEE Radio Frequency Integrated Circuits (RFIC) - Phoenix, AZ, United States
Duration: 2001 May 20 → 2001 May 22
|2001 IEEE Radio Frequency Integrated Circuits (RFIC)
|01/5/20 → 01/5/22