Based on ab initio total energy calculation, we show that a dynamic ad-dimer twisting assisted (DATA) process plays a crucial role in facilitating a novel structural reconstruction involving surface and subsurface atoms on Si(001). It leads to self-assembly of long nanowires of group-V elements (Bi, Sb) in the trenches of surface dimer vacancy lines (DVLs) with a characteristic double-dimer configuration. The key to this is the lowering of the kinetic barrier by the DATA process in conjunction with a favorable interaction between ad-dimers and step edges in DVLs. The present results provide an excellent account for experimental observations and reveal the atomistic origin and the dynamic transformation path for nanowire self-assembly on Si(001).
|Journal||Physical review letters|
|Publication status||Published - 2005 Jun 10|
ASJC Scopus subject areas
- Physics and Astronomy(all)