Dynamic behavior of a silicon oxide layer on silicon ultrafine particles

Yuki Kimura, Hiroshi Ueno, Hitoshi Suzuki, Takeshi Sato, Toshiaki Tanigaki, Osamu Kido, Chihiro Kaito, Yoshio Saito

Research output: Contribution to journalArticlepeer-review


In order to clarify the high-temperature behavior of a silicon oxide layer on the surface of Si ultrafine particles, the oxide layer has been studied using the atomic-resolution high-temperature stage of a transmission electron microscope. The natural oxide layer grown on Si ultrafine particles by exposure to air was an amorphous silicon oxide layer with a thickness of 1.5 nm. This oxide layer started to dissolve into the Si crystal upon heating at 500°C, and was fully dissolved into the Si crystal at 600°C in vacuum. When the specimen was cooled back to room temperature, the silicon oxide layer reappeared on the Si surface. This phenomenon, which can be detected only at high temperatures, is presented in this paper.

Original languageEnglish
Pages (from-to)361-364
Number of pages4
JournalSurface Review and Letters
Issue number2-3
Publication statusPublished - 2003 Apr 1


  • High-temperature behavior
  • In situ observation
  • Oxide layer
  • Silicon particle
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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