Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks

Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S. Shur, Georgy Fedorov, Vladimir Leiman

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


We study theoretically the carrier transport and the plasmonic phenomena in the gated structures with dense lateral carbon nanotube (CNT) networks (CNT “felt”) placed between the highly-conducting slot line electrodes. The CNT networks under consideration consist of a mixture of semiconducting and metallic CNTs. We find the dispersion relations for the two-dimensional plasmons, associated with the collective self-consisted motion of electrons in the individual CNTs, propagating along the electrodes as functions of the net electron density (gate voltage), relative fraction of the semiconducting and metallic CNTs, and the spacing between the electrodes. In a wide range of parameters, the characteristic plasmonic frequencies can fall in the terahertz (THz) range. The structures with lateral CNT networks can used in different THz devices.

Original languageEnglish
Title of host publicationScaling and Integration of High-Speed Electronics and Optomechanical Systems
PublisherWorld Scientific Publishing Co.
Number of pages10
ISBN (Electronic)9789813225404
ISBN (Print)9789813225398
Publication statusPublished - 2017 Jan 1


  • Carbon nanotube network
  • Terahertz radiation; plasmonic
  • Two-dimensional carrier system


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