Dynamic magnetic intermediate state during nanosecond spin transfer switching for MgO-based magnetic tunnel junctions

Tatsuya Aoki; Yasuo Ando; Mikihiko Oogane; Hiroshi Naganuma

doi:10.1143/APEX.3.053002

Dynamic magnetic intermediate state during nanosecond spin transfer switching for MgO-based magnetic tunnel junctions

Tatsuya Aoki, Yasuo Ando, Mikihiko Oogane, Hiroshi Naganuma

Tohoku University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report for the first time that the dynamic magnetic intermediate state (DMI) was observed at a speed of several ns during spin transfer switching for MgO-based magnetic tunnel junctions (MTJs). The DMI was observed as slow resistance oscillation at the center of the parallel to anti-parallel state by single shot time domain measurements. The DMI is observable at certain current amplitudes. The outbreak probability decreases with further current increase. We concluded that the DMI originates from inhomogeneous magnetization behavior. On the other hand, previous single shot time domain measurements have shown only for single-domain-like magnetization behavior.

Original language	English
Article number	053002
Journal	Applied Physics Express
Volume	3
Issue number	5
DOIs	https://doi.org/10.1143/APEX.3.053002
Publication status	Published - 2010 May

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abstract = "We report for the first time that the dynamic magnetic intermediate state (DMI) was observed at a speed of several ns during spin transfer switching for MgO-based magnetic tunnel junctions (MTJs). The DMI was observed as slow resistance oscillation at the center of the parallel to anti-parallel state by single shot time domain measurements. The DMI is observable at certain current amplitudes. The outbreak probability decreases with further current increase. We concluded that the DMI originates from inhomogeneous magnetization behavior. On the other hand, previous single shot time domain measurements have shown only for single-domain-like magnetization behavior.",

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PY - 2010/5

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N2 - We report for the first time that the dynamic magnetic intermediate state (DMI) was observed at a speed of several ns during spin transfer switching for MgO-based magnetic tunnel junctions (MTJs). The DMI was observed as slow resistance oscillation at the center of the parallel to anti-parallel state by single shot time domain measurements. The DMI is observable at certain current amplitudes. The outbreak probability decreases with further current increase. We concluded that the DMI originates from inhomogeneous magnetization behavior. On the other hand, previous single shot time domain measurements have shown only for single-domain-like magnetization behavior.

AB - We report for the first time that the dynamic magnetic intermediate state (DMI) was observed at a speed of several ns during spin transfer switching for MgO-based magnetic tunnel junctions (MTJs). The DMI was observed as slow resistance oscillation at the center of the parallel to anti-parallel state by single shot time domain measurements. The DMI is observable at certain current amplitudes. The outbreak probability decreases with further current increase. We concluded that the DMI originates from inhomogeneous magnetization behavior. On the other hand, previous single shot time domain measurements have shown only for single-domain-like magnetization behavior.

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Dynamic magnetic intermediate state during nanosecond spin transfer switching for MgO-based magnetic tunnel junctions

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