Abstract
For the 6” silicon CZ system, effects of a funnel-shaped radiation shield on the temperature profiles in the melt and crystal, the melt/crystal interface shape and also the distribution of the thermal stresses were investigated theoretically by the finite element analysis based on the conduction-dominated model. It is found that a funnel-shaped radiation shield can make the melt/crystal interface less convex to the crystal (relatively flatter), providing a higher pull rate and smaller thermal stresses in the crystal compared with other radiation shield geometries, such as a doughnut (torus) shape. Also, the principal operating conditions in the CZ system, such as the crucible temperature, can be changed widely by selecting the emissivity and/or thickness of the shield.
| Original language | English |
|---|---|
| Pages (from-to) | 84-89 |
| Number of pages | 6 |
| Journal | JOURNAL of CHEMICAL ENGINEERING of JAPAN |
| Volume | 25 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1992 |
Keywords
- Crystal Growth
- Czochralski Method
- Finite Element Analysis
- Radiation Heat Transfer
- Silicon
- Single Crystal
- Thermal Stress
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)