Effect of a radiation shield on silicon cz growth

Takao Tsukada, Nobuyuki Imaishi, Mitsunori Hozawa, Katsuhiko Fujinawa

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


For silicon CZ crystal growth, the effect of inserting a radiation shield into the furnace on the temperature profile in the melt and crystal and on the shape of the melt/crystal interface was studied theoretically by use of finite element analysis based on the conduction-dominated model. It was found that inserting a radiation shield makes the interface shape less convex to the crystal in comparison with that without the shield except for the initial stage. Also, with use of a short radiation shield there is a possibility of obtaining a higher pull rate because the temperature gradient near the interface becomes steeper than that without the shield.

Original languageEnglish
Pages (from-to)146-151
Number of pages6
JournalJournal of Chemical Engineering of Japan
Issue number2
Publication statusPublished - 1987


  • Crystal Growth
  • Czochralski Method
  • Finite Element Method
  • Heat Conduction
  • Interface Shape
  • Numerical Simulation
  • Radiation Shield
  • Silicon


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