Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

Tadao Tanabe; Shu Zhao; Yohei Sato; Yutaka Oyama

doi:10.1063/1.4986768

Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

Tadao Tanabe, Shu Zhao, Yohei Sato, Yutaka Oyama

IMRAM - Division of Measurements

Tohoku University

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The interplanar binding strength of layered GaSe_1-xTe_x crystals was directly measured using a tensile testing machine. The GaSe_1-xTe_x crystals were grown by a low temperature liquid phase solution method under a controlled Se vapor pressure. The stoichiometry-controlled GaSe_1-xTe_x crystal has the ϵ-polytype structure of GaSe, where the Te atoms are substituted for some of the Se atoms in the GaSe crystal. The effect of adding Te on the bonding strength between the GaSe layers was determined from direct measurements of the van der Waals bonding energy. The bonding energy was increased from 0.023 × 10⁶ N/m² for GaSe to 0.16 × 10⁶ N/m² for GaSe_1-xTe_x (x = 0.106).

Original language	English
Article number	165105
Journal	Journal of Applied Physics
Volume	122
Issue number	16
DOIs	https://doi.org/10.1063/1.4986768
Publication status	Published - 2017 Oct 28

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title = "Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force",

abstract = "The interplanar binding strength of layered GaSe1-xTex crystals was directly measured using a tensile testing machine. The GaSe1-xTex crystals were grown by a low temperature liquid phase solution method under a controlled Se vapor pressure. The stoichiometry-controlled GaSe1-xTex crystal has the ϵ-polytype structure of GaSe, where the Te atoms are substituted for some of the Se atoms in the GaSe crystal. The effect of adding Te on the bonding strength between the GaSe layers was determined from direct measurements of the van der Waals bonding energy. The bonding energy was increased from 0.023 × 106 N/m2 for GaSe to 0.16 × 106 N/m2 for GaSe1-xTex (x = 0.106).",

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T1 - Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

AU - Tanabe, Tadao

AU - Zhao, Shu

AU - Sato, Yohei

AU - Oyama, Yutaka

PY - 2017/10/28

Y1 - 2017/10/28

N2 - The interplanar binding strength of layered GaSe1-xTex crystals was directly measured using a tensile testing machine. The GaSe1-xTex crystals were grown by a low temperature liquid phase solution method under a controlled Se vapor pressure. The stoichiometry-controlled GaSe1-xTex crystal has the ϵ-polytype structure of GaSe, where the Te atoms are substituted for some of the Se atoms in the GaSe crystal. The effect of adding Te on the bonding strength between the GaSe layers was determined from direct measurements of the van der Waals bonding energy. The bonding energy was increased from 0.023 × 106 N/m2 for GaSe to 0.16 × 106 N/m2 for GaSe1-xTex (x = 0.106).

AB - The interplanar binding strength of layered GaSe1-xTex crystals was directly measured using a tensile testing machine. The GaSe1-xTex crystals were grown by a low temperature liquid phase solution method under a controlled Se vapor pressure. The stoichiometry-controlled GaSe1-xTex crystal has the ϵ-polytype structure of GaSe, where the Te atoms are substituted for some of the Se atoms in the GaSe crystal. The effect of adding Te on the bonding strength between the GaSe layers was determined from direct measurements of the van der Waals bonding energy. The bonding energy was increased from 0.023 × 106 N/m2 for GaSe to 0.16 × 106 N/m2 for GaSe1-xTex (x = 0.106).

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Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

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