Effect of additives in organic acid solutions for post-CMP cleaning on polymer low- k fluorocarbon

Xun Gu, Takenao Nemoto, Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


The appropriate post- chemical mechanical polishing (CMP) cleaning solution for an advanced nonporous polymer, ultralow- k fluorocarbon film is proposed. While decrease in fluorine content measured by high-resolution X-ray photoelectron spectroscopy and increase in dielectric constant were observed after additives cleaning with oxalic acid, no significant change of fluorine content and dielectric constant were found after citric acid with different additives and acids without additives cleanings. This reveals that additives play an important role in degradation of the fluorocarbon film. An appropriate selection of additives is important to clean the fluorocarbon film in post-CMP cleaning in advanced large-scale integrated generations. To complete successful integration of the post-CMP cleaning on new dielectric materials such as nonporous low- k fluorocarbon film, an appropriate solution and additives should be carefully selected to avoid electrical degradation in subsequent process.

Original languageEnglish
Pages (from-to)H409-H415
JournalJournal of the Electrochemical Society
Issue number6
Publication statusPublished - 2009


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