TiO//2 (rutile) powder compacts with additions of various oxides were sintered at 1300 degree C in air to examine the effect of the additives on the sintering and the electrical resistivity. Additions of ZnO, In//2O//3, Fe//2O//3, Co//2O//3, and NiO accelarated the sintering, and produced high-density bodies. Although the electrical resistivity of pure TiO//2 was strongly dependent on the sintering atmosphere TiO//2 compacts doped with Sb-oxide had relatively stable resistivity of 10**3 similar 10**4 OMEGA multiplied by (times) cm irrespective of the sintering atmosphere. For Sb-oxide doped TiO//2 compacts sintered in O//2, which indicated p-type semiconductivity, it is considered that ionized titanium vacancies and holes were the predominant defects.
|Number of pages||6|
|Journal||Journal of the Ceramic Society of Japan|
|Publication status||Published - 1975|