Effect of Ar-N2 sputtering gas on structure and TMD effect in Co-(Si-N) nanogranular films

T. Uchiyama, Y. Cao, H. Kijima-Aoki, K. Ikeda, N. Kobayashi, S. Ohnuma, H. Masumoto

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have investigated the effect of N2 ratio in Ar-N2 sputtering gas on tunneling magneto-dielectric (TMD) effect in Co19-(Si-N)81 nanogranular films. Co19-(Si-N)81 films were deposited by co-sputtering Co and Si3N4 targets in Ar-x vol.%N2 mixture gas with different x of 0 to 30. All deposited films have nanogranular structure composed of Co nanogranules with a diameter of 2 ∼ 3 nm embedded in Si -N matrix, and we realized TMD effect in the film for x ≥ 3.3. The film deposited in Ar-6.6 vol.%N2 gas showed the highest TMD response. Moreover, we found the two types of change in both nanostructure and the frequency dependence of TMD effect. This study provides the new way to tailor the frequency response of TMD effect.

Original languageEnglish
Title of host publication2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338362
DOIs
Publication statusPublished - 2023
Event2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Sendai, Japan
Duration: 2023 May 152023 May 19

Publication series

Name2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

Conference

Conference2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Country/TerritoryJapan
CitySendai
Period23/5/1523/5/19

Keywords

  • Tunneling magneto-dielectric effect
  • nanogranular film
  • silicon nitride
  • sputtering method

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