Abstract
BaxSr1-xRuO3 (BSRO) thin films were prepared by laser ablation on quartz substrates at a substrate temperature (Tsub) of 973 K and an oxygen pressure (Po2) of 13 Pa. The effect of Ba substitution for Sr on the microstructure and electrical conductivity (σ) was investigated. (110) -oriented pseudo-cubic BSRO thin films were obtained at a Ba substitution ratio (x) below 0.5. The thin films prepared at x = 0.6 to 0.8 had the 4H-type BaRuO3 (BRO) structure, whereas 9R BRO thin films were obtained at x = 1.0. The BSRO thin films consisted of well-crystallized fine grains. The pseudo-cubic lattice parameter of the BSRO thin films increased linearly from 0.393 to 0.407 with increasing x. The BSRO thin films showed metallic conduction, and the σ decreased due to lattice expansion with increasing χ.
Original language | English |
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Pages (from-to) | 441-444 |
Number of pages | 4 |
Journal | Journal of the Ceramic Society of Japan |
Volume | 116 |
Issue number | 1351 |
DOIs | |
Publication status | Published - 2008 Mar |
Keywords
- Barium ruthenate
- Electricalconductivity
- Laser ablation
- Microstiucture
- Strontium ruthenate
- Substitution effect
- Thin films